成果報告書詳細
管理番号20130000000235
タイトル*平成22年度中間年報 新エネルギーベンチャー技術革新事業 新エネルギーベンチャー技術革新事業(太陽光発電) 革新的SiC高速低価格製造方法とSiC太陽電池の開発
公開日2013/6/22
報告書年度2010 - 2010
委託先名スマートソーラーインターナショナル株式会社 国立大学法人東北大学大学院工学研究科 国立大学法人大阪大学産業科学研究所
プロジェクト番号P10020
部署名技術開発推進部
和文要約
英文要約Title: New Energy Venture Business Technology Innovation Program / New Energy Venture Business Technology Innovation Program(photovoltaic power generation)/ Innovative method of high speed and low cost SiC growth and Development of SiC solar cell(FY2010-FY2011) FY2010 Annual Report

A basic design of the furnace for SiC growth have taken the high frequency induction heating to generate SiO gas at high speed for SiC growth. The furnace was controlled in the argon gas atmosphere. the furnace was constructed for the SiC epitaxial growth based on the structure in a high-quality single crystal growth with results, and examined the structure of the hot-zone in the furnace to give the durability that is able to use in the 2000℃ over and again. The furnace could heat temperature up to 2000℃ in about 20 minutes, and the stable generation of the SiO gas as a material of the SiC was confirmed from SiO2(s)+Si(l)=2SiO(g). The temperature of the substrate was set to 1800℃ with using the specular carbon board experimentally as a wafer to attempt the optimization of the supply speed of the SiO gas. At this time, SiC was grown in 30minutes and its thickness was 20μm. It was confirmed that SiC was grown at an extremely early speed and the process of the SiC epitaxial growth by the vapor phase was from 2SiO(g) +4C(s) =2SiC(s) +2CO(g). Metal contaminants of SiO2 particles were removed most effectively by etching in the HF aqueous solution followed by cleaning in the diluted HCN aqueous solution. It is considered that contaminants on the surface and in the subsurface of the SiO2 particles can be removed by HF etching and readsorbed contaminants can be eliminated by the HCN treatment. Etching 1.5 μm from the surface in HF solution was sufficient to remove metal contaminants in the subsurface of SiO2 particles. The concentration of metal contaminants for SiO2 particles was decreased to 9ppb by this method. The equipment for the cleaning in the HCN aqueous solution and the nitric acid oxidation were prepared for the Si and SiC wafers that will be supplied by SSSI. 3 and 6 inches wafers can be treated with the equipment. SiC homo pn junction was by Al ion implantation into n-type 3C-SiC polycrystalline wafer. Al acceptor density was 5×1018cm-3, the penetration depth was 150nm. Moreover, the activation annealing was performed over 1600℃ with SiC growth chamber, the annealing time was 3 min. The electrodes were deposited by sputtering technique. Ti/Al was used for p+ electrode, Ni for n+ electrode. Post deposition annealing was performed at 900℃ for 30 min in Argon gas flow. Current-voltage curve of above-mentioned prototype solar cell was measured, showed rectifying characteristic and the possibility as a solar cell. However, as shown in current-voltage curve, the reverse leakage current was too large. As a consequence, the conversion efficiency of the cells could not be measured at this point. The conditions of acceptor ion implantation and the activation annealing are modified in the next test cell. At the same time, acceptor impurity doping during the epitaxial growth is currently under development. Separately from the fabrication of test cells, the formation of a through hole 90 nm in diameter for SiC substrate was carried out using a 532nm laser.
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