成果報告書詳細
管理番号20130000000289
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)低倍率集光型薄膜フルスペクトル太陽電池の研究開発(フルスペクトルTCO)
公開日2013/6/22
報告書年度2012 - 2012
委託先名旭硝子株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Thin Film Full Spectrum Solar Cells with Low Concentration Ratios (Full Spectrum TCO) (FY2008-FY2014) FY2012 Annual Report

Our targets of FY2012 are (1) absorption (average from 0.4 ~ 2[um]) is less than 7[%], (2) Resistivity is less than 1e-3[Ohm cm] (Sheet resistance is less than 12[Ohm/square]), (3) Haze ratio is more than 80% at wavelength 1.0um, and more than 60% at wavelength 1.2um. By the last year, we have improved mobility of SnO2:F to around 80[cm2(Vs)] by LPCVD. But haze ratio of these films are much lower than the target. To increase haze ratio, we have combined SnO2:F with high mobility deposited by LPCVD and reactive ion etching (RIE) processed glass substrate. However, two problems have been found. [1] The mobility of SnO2:F on RIE substrate dropped from that on flat glass (75 to 36 cm2/(Vs)). To avoid this drop, thicker film is needed. [2] To keep high transmittance with thicker film, lower carrier concentration is needed. But the mobility dropped with lower carrier concentration. We also found that absorption is almost constant if sheet carrier concentration (n*d: product of carrier concentration n and film thickness d) is kept constant even if thickness is different. In order to solve these constrains [1] and [2], we have adopted a stacked structure using thick non-doped layer of around 3000 nm and thin F-doped layer of 600 nm. With this novel approach, we can control sheet carrier concentration of thick films (about 3600nm, stacked structure) and make it the same as that of SnO2:F single layer. We have successfully achieved the high mobility (79 cm2/(Vs)), low sheet carrier concentration (7x1015 cm-2) and high haze value (90% at wavelength of 1000 nm) at the same time. By this configuration, all of targets of FY2012 have been achieved.
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