成果報告書詳細
管理番号20130000000290
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)低倍率集光型薄膜フルスペクトル太陽電池の研究開発(広バンドギャップシリコン系薄膜)
公開日2013/6/21
報告書年度2012 - 2012
委託先名シャープ株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Thin Film Full Spectrum Solar Cells with Low Concentration Ratios (Wide Band gap Si Based Thin Film) (FY2008-FY2014) FY2012 Annual Report

In this year, we have tried to improve each layer in a wide band gap cell (a-SiC:H cell) in order to obtain open-circuit voltage (Voc) above 1.06 V (1.16 V in the case of low magnification condensing) and short-circuit current density (Jsc) of 9.0 mA/cm2.
At first, we focused on a p-layer. Higher Voc and F.F. were obtained by very low hydrogen dilution ratio and B2H6 concentration during deposition of p-layer. After adjusting the band-gap of p-layer by CH4 concentration, the Voc reached 0.996 V.
Secondly, we examined about the depositing conditions of the n-layer. We have found that the IV characteristics of the cell with the n-layer fabricated by the pulsed deposition are better than that by the conventional CW deposition.
Next, we considered about the buffer layers that are between p- and i-layer and between i- and n-layer with fixing the depositing conditions of p-, i-, and n-layer. We used to use the buffer layer between p- and i-layer which had a band-gap gradually narrowing toward i-layer. But we have improved the Voc by using the buffer layer with constant band-gap whose value is in the middle of the band-gaps of p- and i-layer. We have adopted the a-SiO:H as the buffer layer between i- and n-layer because a-SiO:H has the more negative Fermi level than a-SiC:H using i-layer. The cell with a-SiO:H buffer layer showed the increase of Voc by about 10 mV.
As a result, the cell with all these consideration exhibits the Voc of 1.027 V and the Jsc of 10.5 mA/cm2. (F.F. is 0.54 and - is 5.8%). These values are obtained in the condition that the thickness of i-layer is 400 nm. Higher Voc and F.F. is expected by using thinner i-layer. However, when we fabricate the cell with thinner i-layer, the Voc and F.F. become worse. We now research this problem and try to get each layer having higher quality. When these are solved, we will reach the middle goal (Voc = 1.06 V, Jsc = 9.0 mA/cm2).
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