成果報告書詳細
管理番号20130000000354
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業 低倍率集光型薄膜フルスペクトル太陽電池の研究開発(放熱基板カルコパイライト系集光型セル)
公開日2013/6/15
報告書年度2012 - 2012
委託先名青山学院大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Thin Film Full Spectrum Solar Cells with Low Concentration Ratios (Chalcopyrite-Based Thin Film Concentrator Solar Cells on Metal Substrates) (FY2008-FY2014) FY2012 Annual Report

1. Objectives: The objectives of this sub-project are as follows:(1) Development of deposition process for narrow-gap CuIn(Se1-xTex)2 -based thin-films.(2) Fabrication and evaluation of CuIn(Se1-xTex)2 -based thin-film solar cells.(3) To realize a CIGSe filtered efficiency of 2 % ( under low concentrated illumination) (1) Development of deposition process for narrow-gap CuIn(Se1-xTex)2 -based thin-films CuIn(Sex,Te1-x)2 ( hereafter CIST) has been investigated as a quaternary chalcopyrite material for narrow-bandgap thin film solar cells of tandem photovoltaic devices combined with a wide-gap solar cells. Numerical simulations are realized to evaluate the potential of such devices. CIST thin films have been deposited on Mo-coated SLG by single-stage coevaporation and three-stage possesses. Both films are characterized by surface and in-depth X-ray Photoelectron Spectroscopy (XPS) and by transmission-reflection spectroscopy. A very narrow bandgap of less than 0.9 eV is achieved by accurately tuned the Te/(Se+Te) atomic ratio, much smaller than ternary compounds such as CuInSe2, CuIn3Te5 or CuInTe2. Both layers have a very good compact aspect and no adhesion problem have been found by scanning electron microscopy (SEM). The single stage deposited CIST film has an average grain size in the 500-1000 nm range; as expected, the grain of the three-stage deposited CIST layer are larger with a size comparable to the film thickness (about 2000 nm). The overall aspect of the CIST layers is very similar to that of CISe or CIGSe layers deposited by similar processes, which is an indication that the inclusion of Te does not significantly affects the film’s morphology. (2) Fabrication and evaluation of narrow-gap CuIn(Se1-xTex)2 -based thin-film solar cells CIST solar cells with different Te contents have been fabricated with the standard CdS/ZnO/ZnO:Al stack on both single-stage and three-stage deposited CIST films. These solar cells are characterized by J-V analysis under AM 1.5 illumination, and in a multi-junction-like configuration using a CIGSe ( Eg=1.5 eV) filter deposited on a SLG to demonstrate the superiority of the narrow bandgap CuIn(Sex,Te1-x)2 over wider bandgap ternary compounds in such configuration. Both J-V and EQE characterizations show a significant increase in the absorption of low energy photons, leading to a short circuit current of 41.5mA.cm-2 and an efficiency of 7% under standard AM 1.5 illumination for the device using CIST thin films with Te/(Te+Se)=0.4 and bandgap energy of 0.9 eV. The photovoltaic parameters are summarized in the table 1. The filtered efficiency of 2% emphasizes the advantage of the narrower bandgap of CIST over wider bandgap ternary compounds in a tandem configuration.
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