成果報告書詳細
管理番号20130000000371
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 CIGS薄膜太陽電池モジュールにおける低コスト化技術の開発
公開日2013/6/22
報告書年度2012 - 2012
委託先名株式会社ホンダソルテック
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title : Development of cost reduction technology for CIGS thin film solar cells (FY2012-FY2013) FY2012 Annual Report

We have carried out five measures to achieve low cost production by the end of 2015. We have established the basic technology of three measures during 2012.
1)Development of selenization process. In selenization process, reducing H2Se gas have been an effective measure in order to cut down production cost. However, when CIGS thin film solar cells were fabricated by reducing H2Se gas in conventional selenization process, we found that Voc was decreased. The depth profile of the fabricated CIGS thin films was analyzed. From the result of the analysis, we confirmed that the CuGaSe2 formation in near surface of CIGS thin films was reduced and Ga/(In+Ga) ratio was low. Furthermore, the grain size of CIGS thin films decreased because of suppression of selenization reaction. Therefore, CIGS thin films were fabricated with adding high external energy in order to promote selenization reaction, so that Ga/(In+Ga) ratio was increased and the grain size of CIGS thin films was enhanced. We achieved equal performance to that of the device supplied with enough H2Se gas to fabricate high quality CIGS thin films. As a result given above, we realized cutting down of production cost is possible with high external energy in selenization process.
2)Development of laser patterning P3. As the development of laser patterning P3, we investigated several different types of laser for scribing, and understood the influence of lasers over thin films. The result of performance test of small size submodule, we found that FF dropped because of the increase of leak current when transparent conductive oxide and the surface of CIGS thin films were removed. On the other hand, we observed the performance of submodule that CIGS thin films were removed completely was equal to that made by using mechanical patterning of P3 and no CIGS thin films were influenced by the heat of laser. Therefore, we completed the select of laser.
3)Development of module structure. We selected the encapsulant which has an edge sealing function. We made mini-modules (100cm2) using encapsulants with two or more difference of water vapor transmission rates and carried out dump heat test of 85℃,85% (JIS C8938). We found an encapsulant that maintained the initial performance of mini-module after 1000h, and completed selection of material with an edge sealing function. However the filling method of encapsulant to uneven portion could not be ensured under the condition of current lamination. We will reduce the production time by optimizing conditions of lamination.
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