成果報告書詳細
管理番号20130000000457
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 次世代多接合薄膜シリコン太陽電池の産学官協力体制による研究開発
公開日2013/6/21
報告書年度2012 - 2012
委託先名太陽光発電技術研究組合
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research & Development for Multi-junction Thin-film Silicon Solar Cells for the future by the Consortium composed of Industry, Government and Academia (FY2010-FY2014) FY2012 Annual Report

For realizing commercially competitive thin-film-silicon solar modules, the researches and developments (R&D) for “high-efficiency technologies of multi-junction thin-film-silicon solar cells”, “deposition technologies of thin-film-silicon solar cells for large-area and high-productivity”, and “system technologies by thin-film-silicon solar modules” have been performed by the consortium consisting of 1 national institute and 6 companies and by the collaboration with 6 universities.
The R&D target for the high-efficiency technologies of multi-junction thin-film-silicon solar cells is the development of component technologies for 13% stable efficiency on 30 x 40 cm2 -size modules. We have reported that the 9.6% stable efficiency (1cm2 area) for the a-Si:H single junction solar cell was achieved last fiscal year. In this fiscal year, it was improved up to 10.0% for a-Si:H cell by advancing process conditions and device structure, and this led the stable efficiency of a-Si:H/μc-Si:H tandem solar cells up to 12.0%, which is higher than that in last year by 0.3%. Furthermore, the stable efficiency of 10.5% for μc-Si:H cell, which was the new world record, was achieved by improving photo-management technique. Other component technologies such as high performance textured LPCVD ZnO films on various commercially available glass substrates, new deposition process with less incorporation of nano-particles into the film, μc-SiGe:H cells have also been developed. These will be applied to further advances in the stable efficiency of a-Si:H/μc-Si:H in the next FY.
On the other hand, large-area deposition technologies for thin-film-silicon solar cells with high deposition rate, with high uniformity have successfully been developed. Newly developed VHF plasma source without any standing waves in 2.2 m length at an excitation frequency of 60 MHz achieved the thickness distribution with ±10%. For 1.5m x 1.1m (G5) size substrates, the thickness distributions of ±8.5% for μc-Si:H films and Jsc distribution of ±5.5% for a-SiGe:H films have been achieved. In order to promote the novel VHF plasma sources and large-area deposition process, newly developed SiH4/H2 plasmas diagnostic technique successfully applied to evaluate the deposition rate and also predict suitable deposition conditions for high deposition rate. Investigation methods on device interface and film properties, and a non-destructive and large-scalable evaluation method of defect density in silicon films by using photothermal radiation spectroscopy have also been improved. Based on such investigation results, Voc of μc-Si:H single cell was improved by reducing the defect density in silicon films.
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