成果報告書詳細
管理番号20130000000458
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 CZTS薄膜太陽電池の高効率化技術の研究開発 -小面積セルでの高効率化およびデバイス評価技術の研究開発-
公開日2013/6/21
報告書年度2012 - 2012
委託先名独立行政法人産業技術総合研究所
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high-efficiency CZTS solar cells and submodules (FY2012-FY2013) FY2012 Annual Report

The aim of AIST in this project is to develop the high-efficiency CZTSSe solar cells and evaluation methods of them. AIST group has been trying to adopt the method of CIGS co-evaporation to CZTSSe growth and evaluate the effectiveness.
In the FY2012, we have conducted our research and development for CZTSe-based solar cells by the existing deposition system. We have confirmed the decomposition of CZTSe, in particular, at the deposition temperature more than 400-C, which effect has been already reported by other team. Actually, for co-evaporation method in AIST, the Sn composition in CZTSe films was dramatically dropped from 10.7% (370-C growth) to 0.0% (500-C growth). On the contrary, high-efficiency CZTSSe-based solar cells were obtained by high temperature annealing above 500-C. Therefore, we carried out annealing for co-evaporated CZTSe samples under Se atmosphere. As a result, high temperature thermal treatment at 520-C was carried out with no significant decomposition, and the Sn composition was 12.1% and 11.7% before and after annealing, respectively. The enlargement of the grain size of CZTSe film has been reported after annealing, but the effect observed was not so strong in this study.
We have already reported that the composition of CZTSe was automatically fixed on a tie line between ZnSe and Cu2ZnSnS4. That is, the composition was fixed in spite of independent source supplies and the composition ratio of [Cu] and [Sn] was always determined at 2:1. The phase purity was investigated by x-ray diffraction measurements and Raman measurements. We demonstrated these CZTSe films were single-phase kesterite structure without other phases, such as ZnSe, Cu2Se, SnSe2 and so on, and also showed the composition was almost identical toward the thickness direction by secondary ion mass spectroscopy.
In the FY2012, a new CZTSSe growth system has been installed. By the new CZTSSe growth system, a 100 mm square substrate can be used. Moreover, plasma-cracking cells were also installed for Se and S sources in the new growth system. Small molecules of Se and S can be supplied by the plasma-cracking cells, and the small molecule is expected to have much higher reaction effect. Therefore the cracking system is expected to suppress the decomposition of CZTSSe films under the higher growth temperatures. Owing to the installation of the large scale growth system, AIST can widely supply CZTSSe samples to the members of this consortium.
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