成果報告書詳細
管理番号20130000000517
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)低倍率集光型薄膜フルスペクトル太陽電池の研究開発(p型透明導電膜)
公開日2013/6/11
報告書年度2012 - 2012
委託先名龍谷大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Thin Film Full Spectrum Solar Cells with Low Concentration Ratios (FY2008-FY2014) FY2012 Annual Report

In that year, the Ryukoku University group focused on two areas. Following is a summary of our results.

Task #1: narrow band gap CuIn(Se,Te)2 films deposited by non-vacuum process.

We prepared fine CuIn(Se,Te)2 (CIST) powder suitable for screen printing using a mechanochemical process. Particulate precursors were deposited in a layer by a screen-printing technique, the remaining organic solvent was removed from the screen-printed CIST film and finally the porous precursor layer was sintered into a dense polycrystalline film by hot pressing and post-annealing technique. The CIST solar cells with an Ag/ITO/i-ZnO/CdS/CIST/Mo/soda-lime glass structure were fabricated. The solar cell showed an efficiency of 0.5%. Then We prepared a Cu2Sn(S1-xSex)3 (CTSSe) solid solution with 0-x-1.0. The CTSSe solid solution powders were synthesized by mixing the elemental powders and post-annealing. The band gaps of CTSSe solid solution were determined by the diffuse reflectance spectra of the powder samples and the transmittance spectrum of the film fabricated by a non-vacuum thin-film fabrication process. The band gap of the Cu2Sn(S1-xSex)3 solid solution linearly decreases from 0.87 eV (x = 0.0) to 0.67 eV (x = 0.6) with increasing Se content. The CTSSe solid solution has potential as a narrow band-gap absorber material for thin-film full spectrum solar cells. The CTS solar cell with an Ag/ITO/i-ZnO/CdS/CIST/Mo/soda-lime glass structure showed an efficiency of 1.0%.

Task #2: Development of p-type TCO films for thin film full spectrum solar cells

(a) NiO and Ag-doped NiO films were prepared by pulsed laser deposition (PLD). The NiO film showed p-type conduction and showed the highest conductivity of 104 Scm-1. The NiO:Ag film also showed p-type conduction and the highest conductivity of 180 Scm-1. The NiO and NiO:Ag films had average transmittance of >50% in the visible light region. The estimated band gap energies of the films were about 3.6eV. BaCuSeF films were fabricated for bottom electrode of CdS/CdTe solar cells. The BaCuSeF layer was deposited at low substrate temperature of 200oC. The CdS/CdTe solar cell with a BaCuSeF bottom electrode showed an efficiency of 1.92%(Voc=807mV, Jsc=4.15mA/cm2, FF=0.57).

(b) Niigata University is working to develop p-type TCO films by the reactive-sputtering and solution methods. Undoped and Ag-doped NiO films were deposited under Ar-diluted oxygen gas by using the facing-target-sputtering-system. The undoped NiO films at high substrate temperatures tended to exhibit high transparency but low hole concentration. The hole concentration slightly increased by Ag-doping. Ag-, Li- and Cu-doped NiO films were also prepared by the spin-coating method using metal-acetate solution followed by annealing in air. Improvements in p-type conductivity were observed by Li- and Cu-doping.
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