成果報告書詳細
管理番号20130000000424
タイトル*平成24年度中間年報 次世代半導体微細加工・評価基盤技術の開発 EUVマスク検査・レジスト材料技術開発
公開日2013/10/1
報告書年度2012 - 2012
委託先名株式会社EUVL基盤開発センター
プロジェクト番号P10025
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title:EUV mask inspection and resist material research (FY2011-FY2013)FY2012Annual Report

EUV mask blank inspection technology
1.We have completed tool assembly of ABI, and verified the capability of detection for 1nm height and 50nm FWHM phase defect.
2.We examined the image degradation by phase defect using an EUV exposure tool with a programmed defect mask. Also the accuracy of lithography simulation has been improved for hp11nm development.
3.The diffraction patterns of phase defects with 25-100nm width were acquired by micro CSM.
The dependence of diffraction pattern on the geometric property of defect was observed.
4.The development of mask observation technique using an EUV bright field microscope has been initiated for hp11nm and beyond. The tool design has been completed. Tool will be available in FY2013.
EUV patterned mask inspection technology
1.We confirmed the detection of 16nm sized pattern defect as a PI tool specification in hp16nm.
The highly accelerated electron improves the resolution and transmittance. The dependence of the incident electron energy on the capability of defect detection was verified by calculation. The detection of the 16nm sized defect is achieved by 1000eV incident electron. The improvement of S/N for 16nm sized defect from 7.8 to 37 was achieved by detection logic study.
2.The performance of developing electron optics was examined. Analysing acquired electron images, we verified >0.5 image contrast of 64nm dense line pattern. More than 60 times electron transmittance was also confirmed by measurement.
EUV resist material research
1.Two new EIDEC standard resists (ESR), the ESR2 and the negative tone resist ESR3 were selected from a series of 300 EUV resist materials evaluated based on targets in resolution limit, line width roughness (LWR), and sensitivity. Moreover, significant improvements were made for the in situ resist
dissolution analysis (using high speed atomic force microscopy or HS-AFM) tool and methodology. This resulted in the new capability of analyzing the dissolution characteristics of half-pitch lines and spaces patterns at standard developer concentration.
2.EIDEC has proposed the basic rule how to reduce the outgas testing leveraging the experimental result that the contamination film thickness was simply proportional to the protecting unit ratio, PAG loading, the quencher loading, and inverse proportional to PEB temperature. The correlation of non-cleanable contamination between EB and EUV was found to be less than that of cleanable contamination.
PAG anion was contaminated at unexposed area due to its high sticking coefficient. The dependence of contamination on WS location/posture was observed for higher sticking coefficient.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る