成果報告書詳細
管理番号20130000000885
タイトル*平成24年度中間年報 低炭素社会を実現する新材料パワー半導体プロジェクト/高耐熱部品統合パワーモジュール化技術開発
公開日2013/10/1
報告書年度2012 - 2012
委託先名ファインセラミックス技術研究組合 技術研究組合次世代パワーエレクトロニクス研究開発機構
プロジェクト番号P10022
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title : Development of Heat-Resistive Components and Packaging Technology for Power Modules

SiC power device can act as a high speed switch at temperature range of 200~250C.
In order to utilize this merit, the developments on heat-resistive passive components such as snubber capacitor, snubber resistor, metalized substrate and ceramic circuit board, along with the development on technology for packaging, are conducted.
“Heat-Resistive Capacitor”
A perovskite material with higher specific resistance has been selected as one of the candidate for heat-resistive capacitor up to +250°C.
The characteristics of complex perovskite-type dielectric materials with comprehensive composite variation were examined.
A new evaluation method of dielectric breakdown strength has been developed. And the relationship between grain size and dielectric properties of capacitor materials is investigated by using Aero-sol Deposition process.
“Heat-Resistive Resistor”
The resistivity variation less than ±15% was achieved over the temperature range of -40 to 250°C. The basic composition of high temperature resistive materials was determined. A structure of high temperature resistors was designed based on a simulation for a new interconnection pattern and a single-sided electrode structure. The developed material was evaluated by microspectroscopy of UV-VIS-IR reflectance.
“Metalized substrate”
A silicon nitride ceramic with high thermal conductivity of 150 W/(m*K), high fracture toughness of 6 MPa*m1/2 and moderate strength of 600 MPa was developed by optimizing the type and amount of sintering additives. First-stage metalized substrates in which copper plates were bonded with the developed high thermal conductivity silicon nitrides have been successfully fabricated as a result of optimization of brazing metal composition as well as structural design for metal-ceramic interface.
“Ceramic Circuit Board”
Ceramic circuit boards characterized as a via-array circuit system or a thick internal conductor layer circuit system for the primitive module were studied. In the via-array circuit system, a co-firing processing technology for the boards capable of carrying 50 A was developed. In the a thick internal conductor layer circuit system, a co-firing processing technology for a surface copper layer with a thickness of 100 micrometer and an inner copper layer with a thickness of 50 micrometer was developed.
“Packaging Technology”
The assembly process and structural design of 1200V-50A class SiC power module which is composed of SiC power devices, ceramics resistor, ceramics capacitor, and ceramics substrates has been investigated. This process and design is determined based on the results of the mechanical, thermal, and electrical analyses. The results of the consideration about the precise alignment are also reflected.
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