成果報告書詳細
管理番号20130000000421
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 フレキシブルCIGS太陽電池モジュールの高効率化研究(結晶欠陥の検出・同定、欠陥低減化技術開発支援)
公開日2013/10/25
報告書年度2012 - 2012
委託先名筑波大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance flexible CIGS PV modules (FY2010-FY2014) FY2012 Annual Report

The goal is to demonstrate high performance CIGS solar cells. To achieve the subjects set as the goal, detection and identification of defects in CIGS has been carried out, especially study on the properties of 0.8eV defect and formation of Cu2Se in CIGS was focused in 2012.
The properties of the defect level at 0.8eV above the valence band in CIGS were studied by two-wavelength excited photoluminescence (PL) method. The two-wavelength excited PL involves two different pumping light sources, that is, 635 nm diode laser used as an above-gap excitation and 1550 nm diode laser whose energy corresponds to the defect level resulting in having a role of charge saturation at the defect level. The intensity of the two-wavelength excited PL was stronger than that without 1550 nm laser irradiation for all specimens and increased with increasing Ga content. The results suggest the 0.8eV defect level acts as recombination center at room temperature and the defect density increased with increasing Ga content.
Raman peak at 260cm-1 which is related to Cu2Se was detected in CIGS with the Ga content of more than 0.4, and its intensity increased with increasing Ga content. The cause of the formation of Cu2Se was studied. The distribution in depth of Cu2Se was measured by Raman spectroscopy using step etching technique and found that the formation of Cu2Se in the CIGS was not uniform in depth. Considering the difference of the chemical nature between In and Ga, diffusion and chemical reaction properties may be different. The results indicate that the diffusion and chemical reaction are one of the causes of the formation of Cu2Se.
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