成果報告書詳細
管理番号20130000000422
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 CZTS薄膜太陽電池の高効率化技術の研究開発
公開日2013/10/25
報告書年度2012 - 2012
委託先名筑波大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high-efficiency CZTS solar cells and submodules (FY2012-FY2013) FY2012 Annual Report

The goal is to demonstrate high performance CZTS solar cells with the conversion efficiency of more than 13% by the end of 2013. To achieve the subjects set as the goal, detection and identification of defects in CZTS has been carried out, especially study on the formation of defect phases such as Cu2S, ZnS, Cu4SnS4 and so on, and on the deep defect levels by admittance spectroscopy has been carried out.
Defect phase of Cu2S was detected by X-ray diffraction measurements and ZnS was detected by Raman spectroscopy for all samples grown under Sn deficient condition. The intensity of the X-ray diffraction and Raman peaks corresponding to Cu2S and ZnS was almost constant although the growth condition of Cu/Sn was changed and the device performance showed various values. The band gap energy and the polarity of Cu2S and ZnS are 1.2eV with p-type and 3.6eV with n-type, respectively. The effect of the formation of such defect phases on the device performance are under investigation.
The admittance spectra were measured for CZTS grown under various Cu/Sn ratio, and deep defect levels around 300meV from the valence band was detected. The defect level seems to be sensitive to surface treatment of the CZTS samples and deposition method of the electrode. To get intrinsic information about defects in CZTS, surface treatment process and electrode deposition method are now optimizing.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る