成果報告書詳細
管理番号20130000000832
タイトル*平成24年度中間年報 低炭素社会を実現する革新的カーボンナノチューブ複合材料開発プロジェクト グラフェン基盤研究開発 ショウノウを活用した単結晶グラフェンの研究開発(2)
公開日2013/10/22
報告書年度2012 - 2012
委託先名学校法人中部大学
プロジェクト番号P10024
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Development of Innovative Carbon Nanotube Composite Materials for a Low Carbon Emission Society Project for Basic Research and Development of Graphene R&D of Single Crystal Graphenes by Camphor Chubu University (FY2012-FY2013) FY2012 Annual Report

7- 4- 1 Research Title: R&D of Crystal Growth of Large Area Graphene. 7-4-1-1 Polishing Cu substrate for graphene growth and its characterization. In order to achieve large domain size graphene on Cu substrate, the surface of Cu substrate was polished by using gas cluster ion beam (GCIB) process. This work was conducted in joint research with Fujikoshi Co., Ltd. The GCIB process smoothened roughness of Cu substrate from 500 nm to 50 nm. 7-4-1-2 Research for increasing the domain size of graphene. CVD growth method is suitable for mass production of graphene crystal; however have low mobility with high carrier scattering due to small domain size. In order to obtain high mobility, it is necessary to fabricate graphene crystal film with large domain size. Irradiating Cu board with laser light using existing microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD) equipment, optimizing irradiation conditions, such as intensity of laser light, and a wavelength, and studying graphene single crystal growth mechanism were performed to develop large domain size graphene.In order to clarify the expansion of domain size with laser, GaN laser operating 405 nm wavelength of 10 W is irradiated in Cu substrate.On Cu substrate with GCIB processed smooth roughness, single crystal graphene with large domain size of 150 μm was grown by MW-SWP-CVD using raw material camphor as a carbon source. 7-4-1-3 Development of equipment for the growth of single crystal graphene. In order to grow large area graphene of above mentioned grain size, a new CVD systemt equipped with camphor vapor evaporation chamber separately for generating camphor vapor as a source, laser light for irradiating Cu substrate and reducing the surface energy of a substrate to promote uniform growth of a single crystal graphene was discussed with Sinko Seiki Co.,Ltd.Laser wavelength equivalent to the plasmon frequency of Cu substrate was used for irradiating Cu surface inside MW-SWP-CVD chamber for growing single crystal graphene. The crystallinity of graphene for both with and without laser irradiating Cu substrate was compared using Raman spectroscopy.By analyzing the results, understanding kind of light and its irradiation method and optimizing experimental and adopted irradiation conditions, such as optimal laser light, the new MW-SWP-CVD for the growth of graphene single crystal with large domain size is designed with Sinko Seiki Co.,Ltd.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る