成果報告書詳細
管理番号20130000000961
タイトル*平成24年度中間年報 次世代高効率・高品質照明の基盤技術開発 LED照明の高効率・高品質化に係る基盤技術開発 窒化物等結晶成長手法の高度化に関する基盤技術開発 (2)
公開日2013/10/18
報告書年度2012 - 2012
委託先名三菱化学株式会社 シチズン電子株式会社 NECライティング株式会社
プロジェクト番号P09024
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Fundamental Technology Development of Next Generation Highly Effective and High-quality Lighting. Fundamental Technology Development Related to Highly Effective and High-quality LED Lighting. Fundamental Technology Development Concerning Upgrade of Nitride Crystal Growth Technique. FY2012 Annual Report

MITSUBISHI CHEMICAL CORPORATION:
We concluded that a multiple crystals growth type HVPE reactor was the most suitable for reduction in costs of GaN substrates for LED. We have succeeded 3inch multiple crystals growth in earlier FY 2012 and started the developement of 4inch multiple crystals growth from later FY 2012. We also studied reduction of residual stress of crystals. The stress were able to be controlled by growth condition and thermal annealing.
TOHOKU UNIVERSITY:
In this fiscal year we increased the emission efficiency and gross amount of photoelectrons (PEs) of our in-house photoelectron gun (PE-gun), in order to improve the spatial resolution of CL mapping and to widen the temporal dynamic range for time-resolved CL of our spatio-time-resolved cathodoluminescence (STRCL) equipment. As a result, both the emission efficiency and total amount of PEs were increased by approximately an order of magnitude, and now we are able to measure SRCL mapping with low acceleration voltages to visualize planar surface defects such as single stacking faults (SFs).
MITSUBISHI PLASTICS, INC.:
MITSUBISHI PLASTICS, INC. :We have studied high-thermal conductive and insulating materials as a suitable component for a device with a COB (chip on board) structure, and obtained the technology to achieve 10 (W/mK) as thermal conductivity along thickness direction. In addition, we implemented analysis which CITIZEN ELECTRONICS CO., LTD. requested by applying the techniques of thermal conductivity evaluations, which we derived from developments of high-performance heat sink materials.
CITIZEN ELECTRONICS Co., Ltd.:
We developed high quality LED devices, high light-extraction efficiency LED devices and high efficiency and high color rendering LED devices. And we achieved high quality LED devices that can improve qualities of LED bulbs like mini krypton lamps and halogen lamps. And to improve light extraction efficiency using GaN on GaN chips, we optimized packaging structure, dominant wavelength of GaN chip and phosphor’s combination. As a result, we achieved luminous efficacy 172lm/W with Ra>80 at typical current density.
NEC LIGHTING, LTD.:
We developed “Efficient electrical circuit”, “Efficient light-extraction optical design” and “Efficient heat dissipation structure”.
As a result, “LED lamp replacing 100W type halogen lamp which emits light from lamp side without multi-shadow”, “LED lamp replacing 75W type mini-krypton lamp that total light distribution was realized”, “LED lamp replacing MR16 type halogen lamp which realized the highest level of total luminous flux” were produced experimentally, and target of total value was achieved.
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