成果報告書詳細
管理番号20130000001015
タイトル*平成24年度中間年報 低炭素社会を実現する新材料パワー半導体プロジェクト 研究開発項目(1)-1-2 高品質・大口径SiC結晶成長技術開発(その2)
公開日2013/11/30
報告書年度2012 - 2012
委託先名新日鐵住金株式会社
プロジェクト番号P10022
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society (FY2012-2013) FY2012 Annual Report
Nippon Steel & Sumitomo Metal Corp.

Intense research on optimization of PVT (physical vapour transport) growth
parameters has been continued systematically since our press release of 6 inch 4H-SiC
single crystals was conducted in 2011. In particular, our research actions have been
concentrated on 4H polytype growth stability at higher growth rates. As a result, by
adopting the nitrogen-marking technology, which has been developed in our company
and is very effective for accurate determination of the growth rate of 6-inch single
crystals, we have confirmed that higher rates of 0.51~0.52mm/h are achieved in 6-inch
crystal grown in our PVT systems, demonstrating that the intermediate target of our
project division has been undoubtedly cleared.

Furthermore, we have also performed fundamental study of dislocation
generation phenomena, specifically at earlier growth stages of 4H-SiC crystals. Such
study is likely to contribute much to the gain toward deeper insight into the dislocation
generation mechanism, eventually being expected to be a new technology for realization
of our final project target, i.e., 6-inch crystals thicker than 50mm with dislocation
densities less than 5000/cm3. A unique experimental combination of both high-quality
bulk substrates for power device applications and epitaxial growth technologies in
Nippon Steel & Sumitomo Metal Corporation has revealed that mechanical damages
existing onto the substrate surface induce a number of threading edge dislocation half
loops as well as stacking faults of so-called double Shockley type (2SSF) structure. The
latter is quite an intriguing result, insisting that, although 2SSF is known to appear in
heavily-doped 4H-SiC crystals, 2SSF can also be formed even in ordinary 4H-SiC
substrates for power device applications with nitrogen-doping of around 1018~1019/cm3
levels, giving rise to harmful damages to various actual power devices.
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