成果報告書詳細
管理番号20130000000800
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高効率集光型太陽電池セル、モジュール及びシステムの開発(日EU 共同開発) 集光型太陽電池用量子・ナノ構造の創製及び評価解析技術の開発(WP2)
公開日2014/5/9
報告書年度2012 - 2012
委託先名国立大学法人東京大学先端科学技術研究センター
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Ultra-high efficiency concentration photovoltaics (CPV) cells, modules and systems (WP2: Novel device technologies and quantum nanostructures for CPV)" (FY2011-FY2014) FY2012 Annual Report

(1) The photovoltaic performance of multi-quantum well (MQW) solar cell was evaluated under concentrated illumination. The open circuit voltage of the superlattice cell, in which the thickness of GaAsP barrier was as small as 3 nm, exhibited rapid recovery with concentration ratio and it almost caught up with the value of reference cell, indicating that the use of MQWs is especially beneficial under sunlight concentration. The growth of MQWs on vicinal substrates, including a 6deg-off Ge substrate was attempted and it was found that substrate misorientation makes the hetero-interface less abrupt and we need lower temperature to implement superlattice with abrupt interfaces.
(2) CPV module with InAs/GaAs multi-stacked quantum dot solar cells was characterized under concentrated illumination. We have verified IB-induced behavior of a faster recovery of Voc compared with GaAs reference cell with increasing concentration.
(3) Time-resolved intraband transition from the intermediate to the continuum states of conduction band in InAs/GaAs quantum dots was studied by using pump-probe photoexcitation spectroscopy. The interband photoluminescence intensity reduced due to the pumping out of carriers in the intermediate state using near infrared laser light and a model describing the carrier relaxation process in the InAs/GaAs QD system was proposed.
(4) The detailed design and production of evaluation system were performed for reliable characterization of CPV MJ tandem cells and quantum nanostructured cells. The spectral response is measurable over a wide spectral range from 300 to 2500nm. The I-V curves and mapping of laser scanned current generation can be obtained for each individual subcell.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る