成果報告書詳細
管理番号20140000000025
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) ポストシリコン超高効率太陽電池の研究開発(ナローバンドギャップ太陽電池)
公開日2014/5/2
報告書年度2012 - 2012
委託先名兵庫県立大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Research and Development of Post-silicon solar cells for ultra-high efficiencies(Narrow Band-Gap Solar Cells)" (FY2008-FY2014) FY2012 Annual Report

Cu2ZnSnS4 (CZTS) nanoparticles (around 10 nm) were synthesized by hot-injection method for the utilization of CZTS solar cells. The structure of CZTS solar cells was . CZTS nanoparticles were printed on Mo-sputtered layer by doctor-blade. After coating on Mo substrate, CZTS layers were annealed in Se vapor to convert into high dense films using carbon box (instead of titanium box or glass box) showed a conversion efficiency of 4.94 %, Voc of 0.39 V and Jsc of 26.2 mA/cm2, which was improved from 1.12% conversion efficiency of the result at the last year. For the evaluation as bottom solar cells in tandem PV system, GaAs photo filter was equipped on the CZTS solar cells at the I-V measurements, resulting in 2.4 mA/cm2 photocurrent density.
CuInGaS2 (CIGS) nanoparticles were synthesized by hot-injection method. CIGS nanoparticles were printed on Mo-sputtered layer by doctor-blade. After coating on Mo substrate, the CIGS layers were annealed in Se vapor to convert into high dense films using carbon box at 500 -C. CIGS solar cell device is . The conversion efficiency for this kind of solar cells is around 0.42%, which was improved from 1.7% conversion efficiency of the result at the last year.
For the narrow band gaps semiconductor, vacuum deposition of Cu2Te was tried. However, the Cu2Te was not able to be evaporated at 800 -C and was evaporated at 1000 -C with segregated structure to Cu and Te.
For another method, Te-vapor annealing of Cu layer was tried, however, we couldn’t obtain homogeneous layer of Cu2Te.
Finally, we got Cu2Te layer by sputtering of Cu2Te target. We tried the utilization for the solar cells by the deposition on p-type silicon wafer, however, the photovoltaic effect was not observed. It was confirmed that the resistivity of sputtered Cu2Te layer was quite high for the utilization of solar cells. The improvement of Cu2Te semiconductor characteristics by doping and changing the deposition parameter is the next goal.
For the narrow band gaps semiconductor, AgInTe2 was deposited by sputtering. Using CdS buffer layer, AgInTe2 solar cells produced 5 mA/cm2 photocurrent, which should be improved by doping and changing the deposition parameter.
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