成果報告書詳細
管理番号20130000000255
タイトル*平成22年度中間年報 新エネルギーベンチャー技術革新事業 新エネルギーベンチャー技術革新事業(太陽光発電) 太陽電池用単結晶シリコン薄膜製造方法の技術開発
公開日2014/6/11
報告書年度2010 - 2010
委託先名株式会社半一 国立大学法人東京大学
プロジェクト番号P10020
部署名技術開発推進部
和文要約
英文要約Title: New Energy Technology Research Development / New Energy Venture Business Technology Innovation Program (Photovoltaic Power Generation) / The Technological Development of Single Crystal Si Thin Films for Solar Cells(FY2009-FY2011) FY2010 Annual Report

Background: Recently, the market of solar cells has grown rapidly and their price has decreased significantly, however we need to decrease their price further. Si substrates account for about half of the production cost of solar cells, and therefore it is important to produce high quality Si substrates from high purity Si source of smaller volume. In this project, we develop a fabrication process of single crystalline Si thin films for solar cells by combining "rapid vapor deposition (RVD)" method with "epitaxial lift-off (ELO)" method. In the first year of Phase II, we developed the inline double-room RVD apparatus and the multi-substrate ELO apparatus, both of which are compatible with 35 mm x 35 mm substrates. Progress report: 1.Fabrication of p-n junction by RVD method.We newly designed and developed a double-room RVD apparatus, which can deposit p-type and n-type Si films sequentially without breaking vacuum. We newly designed and developed a multi-substrate lift-off apparatus, which will enable automatic collection of lifted-off Si thin films on support substrates. We are now trying lifting-off the Si thin films with a p-n junction using these new apparatuses. 2. Fabrication and evaluation of solar cells fabricated by using Si thin films with p-n junction by RVD.We evaluated the dopant depth profile of the RVD-Si thin films by SIMS and confirmed that we can limit the diffusion of dopant within 1 um and the dopant level in the main part of Si thin films at 1E+14~2E+16 atom/cc. We fabricated a solar cell using the RVD-Si thin films. Its power generation efficiency was 2.5%, and we are now trying to improve the efficiency by optimizing the doping profile. 3. Designing the inline process compatible with the practical substrate size of 150 mm x 150 mm. Experiment using the RVD apparatus for 35 mm x 35 mm substrates revealed; (1) the carbon heater above the substrate showed some deflection and (2) Si whiskers were formed on the inner wall of reactor. We will design the RVD apparatus for 150 mm x 150 mm substrates by scaling up the current apparatus with countermeasures for those issues. 4. Examining the substrate structure compatible with solar cells by each manufacturer. We are planning to supply the combined RVD-ELO apparatus for solar cell manufacturers. 5. Business planning We are now planning to supply single-crystalline Si thin films to the solar-cell substrate suppliers by supplying manufacturing apparatus and/or transferring technologies. Summary We newly developed the inline double-room RVD apparatus and the multi-substrate ELO apparatus, both of which are compatible with 35 mm x 35 mm substrates. We also fabricated solar cells using the RVD-Si films.
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