成果報告書詳細
管理番号20130000000557
タイトル*平成24年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事) ポストシリコン超高効率太陽電池の研究開発(広帯域AIGalnN)」
公開日2014/6/14
報告書年度2012 - 2012
委託先名国立大学法人名古屋大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Research and Development of Post-silicon solar cells for ultra-high efficiencies (Development of tandem-type solar cells based on AlGaInN having super wide-rage bandgap)" (FY2011-FY2014) FY2012 Annual Report

(1) GaN on Si for nitride/Si multi junction solar cell
Use of sputter deposited AlN (sp-AlN) layer is found to be very effective to grow good crystalline quality GaN on (111) Si substrate. AFM measurement showed that the RMS was 0.24nm and CL mapping revealed that the dark spot density was 2.2×109cm-2. Therefore, macroscopic crystalline quality of GaN on Si grown by using sp-AlN is almost the same as that of GaN on sapphire using low temperature deposited buffer layer. This technology is very effective to grow large area wafers with a low cost. Sputter deposited InGaN buffer layer is also found to be effective to grow thick InGaN on a sapphire substrate. It should be possible to grow high In content InGaN by using this technology.

(2) Device design and growth process for InGaN MQW
Grid electrode is found to be effective for improving efficiency. By using concentration condition, we achieved 4% conversion efficiency, which is the world’s highest efficiency ever reported.
Increase of growth temperature of barrier layer after the growth of well layer is found to reduce In segregation, thus reducing In rich region inside the well/barrier interface. Control of In segregation is essential to realize both high short circuit density and high open circuit voltage.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る