成果報告書詳細
管理番号20140000000641
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 次世代多接合薄膜シリコン太陽電池の産学官協力体制による研究開発
公開日2014/10/29
報告書年度2013 - 2013
委託先名太陽光発電技術研究組合
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research & Development for Multi-junction Thin-film Silicon Solar Cells for the future by the Consortium composed of Industry, Government and Academia (FY2010-FY2014) FY2013 Annual Report

For realizing commercially competitive thin-film-silicon solar modules, the researches and developments (R&D) for “high-efficiency technologies of multi-junction thin-film-silicon solar cells” and “deposition technologies of thin-film-silicon solar cells for large-area and high-productivity” have been performed by the consortium consisting of 1 national institute and 5 companies and by the collaboration with 3 universities in this year.
The R&D for the high-efficiency technologies of multi-junction thin-film-silicon solar cells is mainly composed of the development of stable a-Si:H and improvement of photo-management technique. For the former, stabilized efficiency of 10.1% for a-Si:H cell by advancing triode-CVD process conditions and device structure, and this led the stable efficiency of a-Si:H/μc-Si tandem solar cells up to 12.2% with very low photo degradation ratio of 2.9%. For the latter, the efficiency of 11.0% for μc-Si cell, which was the new world record, was achieved by improving photo-management technique using an originally developed substrate with honeycomb-shape surface structure. High performance textured LPCVD ZnO films on glass substrates have showed improvement of Jsc by 13% compared with conventional SnO2 substrates. Other technologies such as deposition process with less incorporation of nano-particles into the film new photo-management with textured glass, which could improve Jsc of a-SiGe cell by 7%, have also been developed. These will be applied to further advances in the efficiency of a-Si:H/μc-Si:H in the next FY.
On the other hand, large-area deposition technologies for thin-film-silicon solar cells with high deposition rate have also been advanced. For 1.4m x 1.1m (G5) size CVD process, 100MHz-VHF plasma process has developed and it achieved the deposition rate of 3.1nm/s for μc-Si layer. Such large-size VHF plasma process was applied to prepare μc-Si cells and an efficiency of 10.1% was achieved by using the substrate with honeycomb-shape surface structure mentioned above.
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