成果報告書詳細
管理番号20140000000646
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 CZTS薄膜太陽電池の高効率化技術の研究開発 -小面積セルでの高効率化およびデバイス評価技術の研究開発-
公開日2014/10/29
報告書年度2013 - 2013
委託先名独立行政法人産業技術総合研究所
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high-efficiency CZTS solar cells and submodules (FY2012-FY2014) FY2013 Annual Report

Key technologies which can lead to the improvements in CZTSe and CZTSSe solar cells have been investigated.
We have succeeded in making high-efficiency CZTSe solar cells whose conversion efficiency is 8.46 % with AR coating on soda-lime glass. The key technology which enables the achievement is the optimization of surface treatment after the deposition of CZTSe thin films, particularly the optimization of the conditions of heat treatment of the CZTSe thin films in an atmosphere of Se vapor. Particularly, we have observed that the device performances strongly depend on the heat treatment temperature Ta; we obtained the highest device performance at Ta = 550 C. The performances of the best device are as follows; Voc = 0.418 V/cell, Jsc = 33.4 mA/cm2, and FF = 0.606, and the aperture area of the device is about 0.4 cm2. Influence of the heat treatment on the CZTSe thin films has been investigated by using the electron microscope. The results revealed that the size of the crystal grains increases monotonously with increasing Ta, while the thin films become significantly porous at Ta > 580 C.
We also have succeeded in making high-efficiency CZTSSe solar cells whose conversion efficiency is 11.9 % with AR coating on soda-lime glass. The key technology which enables the achievement is the optimization of surface treatment after the deposition of CZTSSe thin films, in the same way as the case of CZTSe. The surface treatment processes consist (i) surface treatment by some acids, (ii) surface treatment by some cyanides, and (iii) heat treatment in nitrogen gas atmosphere. We have observed that the device performances strongly depend on all of these three processes. The performances of the best device are as follows; Voc = 0.473 V/cell, Jsc = 35.8 mA/cm2, and FF = 0.701, and the aperture area of the device is about 0.4 cm2. Influence of the heat treatment on the CZTSe thin films has been investigated by using the electron microscope. The results revealed that the crystal quality at the interface between CZTSSe and CdS buffer layer is significantly improved by the heat treatment.
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