|英文要約||Title: Development of high performance flexible CIGS PV modules (FY2010-FY2014) FY2013 Annual Report
Defect characterization of CIGS has been carried out to improve the cell performance. Three important results were obtained in 2013 fiscal year. The first result; the capture cross section and the mean time of the electron capture at the defect with the activation energy of around 300meV detected by admittance spectroscopy were estimated to be the order of 1E-16cm2 and micro second, respectively. The results indicate that the 300meV-defect does not affect significantly the device performance. The second result; it was found that the 0.8eV defect works as recombination center at room temperature from the two-wavelength excited photoluminescence. The third result; the impurity phase of Cu2Se was found to be formed in CIGS by insufficient of inter-diffusion between Ga and Cu.