成果報告書詳細
管理番号20140000000708
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 フレキシブルCIGS太陽電池モジュールの高効率化研究 (結晶欠陥の検出・同定、欠陥低減化技術開発支援)
公開日2014/10/29
報告書年度2013 - 2013
委託先名国立大学法人筑波大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance flexible CIGS PV modules (FY2010-FY2014) FY2013 Annual Report

Defect characterization of CIGS has been carried out to improve the cell performance. Three important results were obtained in 2013 fiscal year. The first result; the capture cross section and the mean time of the electron capture at the defect with the activation energy of around 300meV detected by admittance spectroscopy were estimated to be the order of 1E-16cm2 and micro second, respectively. The results indicate that the 300meV-defect does not affect significantly the device performance. The second result; it was found that the 0.8eV defect works as recombination center at room temperature from the two-wavelength excited photoluminescence. The third result; the impurity phase of Cu2Se was found to be formed in CIGS by insufficient of inter-diffusion between Ga and Cu.
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