成果報告書詳細
管理番号20140000000709
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 CZTS薄膜太陽電池の高効率化技術の研究開発 (CZTSの結晶欠陥に関する研究開発)
公開日2014/10/29
報告書年度2013 - 2013
委託先名国立大学法人筑波大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of high-efficiency CZTS solar cells and submodules (FY2012-FY2014) FY2013 Annual Report

Defect characterization of CZTS and Se-rich CZTSSe has been carried out by using admittance spectroscopy, photo-capacitance spectroscopy and two-wavelength excited photoluminescence spectroscopy. The defect levels at around 100-200meV from the valence band were detected, however, its capture cross section and capture time were estimated to be the order of 1E-16cm2 and micro second, respectively. From the results, it has been concluded that the defects does not affect so much the device performance. The defect level around 0.8eV from the valence band was detected in CZTS and CZTSSe. In CZTS, the 0.8eV defect works as a recombination center at room temperature, however, in CZTSSe, it works as an electron trap.
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