|英文要約||Title: Development of high-efficiency CZTS solar cells and submodules (FY2012-FY2014) FY2013 Annual Report
Defect characterization of CZTS and Se-rich CZTSSe has been carried out by using admittance spectroscopy, photo-capacitance spectroscopy and two-wavelength excited photoluminescence spectroscopy. The defect levels at around 100-200meV from the valence band were detected, however, its capture cross section and capture time were estimated to be the order of 1E-16cm2 and micro second, respectively. From the results, it has been concluded that the defects does not affect so much the device performance. The defect level around 0.8eV from the valence band was detected in CZTS and CZTSSe. In CZTS, the 0.8eV defect works as a recombination center at room temperature, however, in CZTSSe, it works as an electron trap.