成果報告書詳細
管理番号20140000000698
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(次世代超薄型結晶シリコン太陽電池の低コスト・高効率化プロセス開発)
公開日2015/1/31
報告書年度2013 - 2013
委託先名シャープ株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Development of Photovoltaic Power Generation Technology, High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Development of low cost and high efficiency manufacturing process for next generation ultra thin crystalline silicon solar cell) (FY2010-FY2014) FY2013 Annual Report

High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Development of low cost and high efficiency manufacturing process for next generation ultra thin crystalline silicon solar cell).Objective: FY2014: To achieve a conversion efficiency of 25 % for mono-crystalline silicon solar cell (150 x 150 mm substrate, Thickness is 100 m), to achieve a conversion efficiency of 20 % for module. Results: Development of next generation ultra thin high efficiency mono-crystalline silicon solar cell. 1. Development of Hetero-Junction Back Contact (HBC) solar cell in which the technology of Interdigitated Back Contact (IBC) solar cell and Hetero Junction (HJ) technology were united. By FY2012, we tried to fabricate double sided Hetero-Junction solar cell samples as one of elemental technology developments of the final HBC solar cells. As a result of the continuous improvement in the technology of the Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or previous cleaning process before the PE-CVD deposition and the tuning of the thickness of each a-Si:H layers, we have achieved high Voc exceeding 730mV, expressing the feature of the Hetero-Junction solar cell well. The Back Contact type solar cell doesn’t have any electrode on the top surface by placing the both p and n electrodes on the back surface. With the conventional structure, one of the electrodes is put on the front surface, then a part of incident light is shaded by the electrode and therefore the efficiency becomes low. With the Back Contact structure, the shading doesn’t occur since there is no electrode on the front surface, then the incident light into the cell increases and the cell efficiency becomes higher. We are trying to fabricate HBC solar cell samples from 2011FY continuously and we have drastically improved the cell efficiency from 14.5% (in-house measurement) to 22.3% (confirmed by JET: Japan Electrical Safety & Environment Technology Laboratories) in 2012FY. Although the cell efficiency was drastically enhanced, F.F. was still lower than that of double sided HJ solar cells. So in this FY, we tried to improve mainly F.F., by an examination of the electrode structure linked to equipments which newly installed in Toyota Technological Institute, by a tuning of the construction process of back contact structure, or by a modification of back side interdigitated pattern. As a result, we achieved 25.1% (confirmed by JET) cell conversion efficiency which closes to the world record 25.0%. Jsc is fairly high indicating the advantage of the back contact structure, and Voc also significantly high indicating the feature of the hetero-junction technology. Since Jsc and Voc are thought to have room to be enhanced, higher cell efficiency should be obtained in the future. Hence, we believe this result demonstrates the potential of HBC structure cells which can exceed 25%. We have also performed development of the simulation in order to accelerate the development of the HBC solar cell. Obtaining cooperation of the consortium, we have constructed model of both of the HBC solar cell structure and double sided HJ solar cell structure. Then we obtained a good agreement between experiments and the models in both case of HBC cells and double sided HJ cells. We intend to utilize the models for the development of the HBC process and design.
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