成果報告書詳細
管理番号20140000000699
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン太陽電池の研究開発(微細レーザー加工技術による高効率化研究開発)
公開日2015/1/31
報告書年度2013 - 2013
委託先名三菱電機株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Improvement of Solar Conversion Efficiency by Development of Laser Microfabrication Process) (FY2010-FY2014) FY2013 Annual Report

We have investigated the processes for fabricating the high-efficiency solar cells based on n-type monocrystalline silicon substrate with high-quality passivation layers and a rear partial contact with an electrode. The front surface of the wafers has a boron-doped layer. To achieve the higher conversion efficiency, we simulated the better depth profile of boron concentration in a doped layer and developed conditions of boron doping in three methods : diffusion from BSG layer made by APCVD, thermal diffusion from BBr3 gas, and boron ion implantation. The both sides of the wafer surfaces are passivated by thin thermal silicon-dioxide and thin PECVD silicon-nitride laminated layers. The minority carrier lifetime of the wafers becomes longer and the open-circuit voltage of 673 mV is obtained of the wafer having a boron-doped layer diffused from BSG layer made by APCVD. A fine-line screen printer is introduced for making the electrodes of the solar cells. A printed Ag or Ag-Al paste was connected with the wafer surfaces through the passivated layers by the thermal treatment. The rear surface of the wafer has a phosphorous-doped layer that has a partially highly-doped region beneath the rear electrode. For the low-reflective textured surface, the random pyramid structure is fabricated by anisotropic wet etching with an alkaline solution. We have fabricated 150-mm-square n-type monocrystalline silicon solar cells by utilizing the developed technologies. As a result, a conversion efficiency of 21.1% is achieved.
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