成果報告書詳細
管理番号20140000000702
タイトル*平成25年度中間年報 太陽エネルギー技術開発 太陽光発電システム次世代高性能技術の開発 マルチワイヤーソーによるシリコンウエハ切断技術の研究開発
公開日2015/1/31
報告書年度2013 - 2013
委託先名株式会社コベルコ科研
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:High performance PV generation system for the future. Development of slicing technology of Si wafer by multi wire saw system. (FY2010-FY2014) FY2013 Annual Report

The target of this development is to get high quality Si wafers with minimum kerf loss. Combination of resin coated steel saw wire (R-wire) and diamond loose abrasive is employed in this development to slice Si ingots. In FY2013, a new subject of to slice multi-crystal Si ingot has started adding to single-crystal Si ingot. The goals of FY2013, wafer thickness, kef loss, damaged layer thickness, surface roughness, and slicing speed were all achieved both in multi-crystal and single-crystal Si ingot slicing. A new goal of wafer warp is fixed in FY2013. In FY2014, the development will be carry out to achieve the official final goals (wafer thickness, kef loss, damaged layer thickness, surface roughness, and slicing speed) and wafer warp. A sever problem that the resin of R-wire was eroded when the wire sliced chamfers at corners of single-crystal Si ingot was appeared. Numerical simulation suggested to decrease the slurry fluid is effective to solve the problem. Modification of No.2 multi wire saw system to control the volume of slurry fluid small and stable was done and the resin erosion problem was cleared. This small volume slurry fluid makes clear that to decrease the abrasive content from conventional 5wt% to 2.5 or 1wt% is very effective to improve slicing ability of R-wire. To change abrasive diameter from conventional 5μm to 7μm is also very effective to improve the slicing ability. In FY2014, these small slurry fluid and 7μm diameter abrasive will be employed in the development to achieve the goals. The advantage of R-wire of small damaged layer becomes smaller and smaller because diamond-wire technology enables smaller damaged layer year by year. A new texturing method that to make fine texture on the surface of as-sliced R-wire wafer is planned to confirm the advantage of R-wire. This method is expected to eliminate the loss of wafer thickness during etching and cleaning process. A big advantage of R-wire of small contamination of metal elements on the surface of wafers is confirmed by high resolution chemical analysis. Contamination of Fe and Ni of R-wire wafer becomes 1/7 compared with diamond-wire wafer. Contamination of Cr becomes 1/3, and Cu becomes 1/5. When R-wire business is started, high speed coiling technology is necessary to improve productivity of R-wire. Selection of suitable material of guide roller of coiling machine was done and it enabled the coiling speed more than 1000m/min with stable wire pitch.
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