成果報告書詳細
管理番号20140000000706
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 赤外線FZ法によるN型四角形状シリコン単結晶育成方法の研究開発(1)
公開日2015/1/31
報告書年度2013 - 2013
委託先名株式会社クリスタルシテム
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Research and Development for Growth Technique of N-type Rectangular Silicon Single Crystalse. (FY 2012-2014) FY 2013 Annual Report

Project: This project develops low cost production method for n-type single crystal silicon, which is used for high efficiency solar cells such as HIT. Poly-Si rod with n-type dopant is set to optical FZ furnace to grow silicon single crystal of 200-220mm diameter. Because no crucible is used and general poly-silicon rod can be used, this method realize low cost production. By controlling distribution and angle of infra-red light, it is feasible to make square-shaped single silicon crystal. Development of this method supports realization of low carbon society through supplying low cost n-type silicon single wafers which costs is the one of the key to make high efficiency solar cells of low cost. Crystal System Corporation and Yamanashi University cooperate to develop the method. Crystal System Corporation develops the optical furnace and its production method for silicon single crystal ingots. Yamanashi University develops characterization method for the crystals. Current results: (a) Development of infra-red optical furnace. The infra-red optical furnace made in FY2013, is improved to grow round-shape ingot up to 100 mm diameter. This furnace will be modified to make square-shape ingot up to 60mm in FY2014. New furnace was designed to grow round-shape ingot of 200-220mm diameter, based on the results of the current furnace. The new furnace can use poly-silicon raw materials of 120-130mm diameter and 1000-2000mm length. (b) Development of FZ growth method with infra-red optical furnace. Growth of silicon single crystal with about 100mm diameter and 150mm length has realized by the optical furnace. The resistivity of the crystal was controlled by inserting n-type dopant into the raw material and its distribution was superior to current CZ method along with growth direction and equivalent for diameter direction. Lifetime was confirmed to be 350-1500 micro second, exceeding original target of 200 micro second. As expected for optical FZ method, oxygen and carbon were not detected by FT-IR measurement. (below 1E+17 atoms/cm3 for oxygen, 2E+16 atoms/cm3 for carbon). No dislocation growth of single crystal has not been attained because necking-less growth was applied. No dislocation growth, however, will be realized because necking process has been also developed this year.
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