成果報告書詳細
管理番号20140000000707
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 赤外線FZ法によるN型四角形状シリコン単結晶育成方法の研究開発(1)
公開日2015/1/31
報告書年度2013 - 2013
委託先名国立大学法人山梨大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Research and Development for Growth Technique of N-type Rectangular Silicon Single Crystalse. (FY 2012-2014) FY 2013 Annual Report

The purpose of our project is to develop low cost growth technique of N-type silicon single crystals for application of HIT type solar cells with high conversion efficiency above 25%. This research project is curried out by cooperation with Crystal Systems Corporation as follows: (1) Research and development of technique and apparatus for crystal growth of large and rectangular silicon single crystals by the infrared-heating FZ method (curried out by Crystal Systems Corp.) (2) Research and development of characterization technique for large silicon single crystals grown by infrared-heating FZ method (curried out by University of Yamanashi). [Outcome of R&D] In FY2013, we developed the characterization technique of crystallographic perfection and strain by X-ray diffraction measurement with using P-doped silicon single crystal grown by the infrared-heating FZ method in Crystal Systems Corp.. The characterization results of the grown crystal are reflected in optimization of the growth conditions for high quality and large single crystals of silicon by the infrared heating FZ method. Distribution of the full width at half maximum (FWHM) and the lattice parameter was estimated by measurements of X-ray diffraction rocking curve and theta - 2 theta scan, respectively in the P-doped silicon single crystals, grown with no necking, of about 70 mm in diameter and 80 mm in length. For the cross section of the silicon crystal near seeding region, the crystallographic perfection was high and uniform with the FWHM distribution of 0.010(3) degree in the radius direction. The strain was very small with the lattice parameter distribution of 0.54318(1) nm in the cross section. Also we found that small degree of the strain is detected in the silicon crystals by our characterization technique. For the growth section of the silicon crystals, the crystallographic perfection was high and uniform with the FWHM distribution of 0.09(3) degree along the growth direction. The degree of the strain with the lattice parameter distribution of 0.5437(3) nm was ten times higher than that along the cross section. Also it was found that the degree of the strain in the initial growth region tended to be large. In this research, we confirmed that infrared-heating FZ method with no necking is effective on growth of grain-free and high-perfect single crystals. The results of the grown crystal are reflected in optimization of the growth conditions for high quality and large single crystals of silicon by the infrared-heating FZ method at present.
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