成果報告書詳細
管理番号20140000000761
タイトル*平成25年度中間年報 次世代プリンテッドエレクトロニクス材料・プロセス基盤技術開発
公開日2015/1/31
報告書年度2013 - 2013
委託先名次世代プリンテッドエレクトロニクス技術研究組合
プロジェクト番号P10026
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約In order to accelerate the development of printed electronics industry, advanced printing techniques for flexible device fabrication have been investigated. Continuous printing process for manufacturing a TFT sheet with high quality and high throughput was examined. Conducting ink, semiconductor ink and dielectric ink materials were studied for fabricating a gate electrode, a gate dielectric layer, a semiconductor layer, source drain electrodes and wiring by using developed printing process. Printing machines, which were suitable for these processes, were also designed. Using these newly developed materials and process, relationship between the performance of printed pattern or TFT devices and the condition of the device fabrication process was examined.
 Alignment techniques for preparing flexible TFT sheet with high resolution and accuracy was investigated. High alignment accuracy within 10 -m on the A4 size flexible substrate was achieved by the newly developed technique. Print techniques with high uniformity for preparation of a large-area device with high quality was also examined. As a result of controlling the printing condition of the printed TFT, variation of the on current was reduced below 10%.
 Low temperature process was examined to reduce the process damage and increase the throughput for fabricating flexible printed devices. In order to reduce the process temperature, advanced sintering techniques for preparing a dielectric layer and a conductive layer were examined by using high density external energy. Ink materials, which are suitable to these low temperature manufacturing processes, were also examined using Nano-metal technology. By applying these newly developed processes, process temperature was reduced into below 120-C. In such a condition, prepared printed TFT device was well active without any signal damages.
 In order to improve the performance of printed TFT, a soluble organic semiconductor material, device structure for printed TFT, and measurement method of printed TFT performance was also examined. We have succeeded in the preparation of a printed TFT device which shows fast response over 0.3 MHz.
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