成果報告書詳細
管理番号20140000000781
タイトル*平成25年度中間年報 低炭素社会を実現する新材料パワー半導体プロジェクト
公開日2015/1/31
報告書年度2013 - 2013
委託先名技術研究組合次世代パワーエレクトロニクス研究開発機構
プロジェクト番号P10022
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society (FY2010-2014) FY2013 Annual Report
High quality and 6” diameter SiC crystal growth; By the stabilization of initial growth using high-quality RAF seed, the ingot of 49mm in length was achieved. In the 6” ingot mass production technology development, an equal quality to the R&D grade was confirmed. In the gas supplying growth method, by controlling the growth temperature and the partial pressure of source gas, the process window of single crystalline growth was clarified. As the result, high speed of 1mm/h and continuous growth of 3”×56mm ingot was achieved. The quality of the growth crystal was equal to the seed crystal. In the solution growth method, the 2”×11mm crystal was obtained by adding aluminum and nitrogen simultaneously. It was shown that the threading dislocation was almost 0 in the expansion growth region.
Development of processing technology of 6” diameter SiC wafer; In the ingot cutting, the developed multi-wire cutting machine with the high wire sending speed of 2500m/s achieved cutting the 6” ingot in about 9 hours, the five times faster than the prior art. In the wrapping technology, the B4C abrasive was successfully used to verify the cost effectiveness. In the novel tribo-assisted grinding, mirror surface of 4” wafer was achieved using the ceric oxide. In the CMP, the conditions in which the latent scratches were almost zero was established.
SiC epitaxial film growth technology development; Corresponding to 6” diameter, for both surfaces of Si and C, the guideline of the growth condition for the aimed uniformity and the low surface defect densitie was clarified. To realize the high speed growth of thick epitaxial film, the newly designed 4” proof reactor was introduced and the mirror surface with 2.2% thickness uniformity and low surface defect density was realized at the growth rate of over 100um/h.
High voltage switching device technology; For realizing of the trench MOSFET for 3kV region, the technology that eliminated the directional dependence of mobility and threshold voltage was developed using the post-oxidation-anneal in the nitrogen contained atmosphere. The full SiC power-module of 3kV×MVA class was designed and the switching examination was executed, and the low loss characteristic was proven. The developed technology was built into the inverter for railroad vehicle, and the operation test was executed.
Evaluation technology development as common basic technology; In the developed integrated evaluation platform, the quantitative index of smoothness was introduced and the correlation with lifetime was statistically analyzed. The screening was shown possible beforehand.
Searching activity of application field of SiC technology; The technology bench mark was updated. For the application strategy, the fieldwork of investigation of domestic wind power generation and the practical use in Europe was executed. It is forecast that SiC spreads in ten years, and the area of high withstand voltage like the train is expected in Europe.
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