成果報告書詳細
管理番号20140000000782
タイトル*平成25年度中間年報 高耐熱部品統合パワーモジュール化技術開発
公開日2015/1/31
報告書年度2013 - 2013
委託先名ファインセラミックス技術研究組合 技術研究組合次世代パワーエレクトロニクス研究開発機構
プロジェクト番号P10022
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title : Development of Heat-Resistive Components and Packaging Technology for Power Modules

SiC power device can act as a high speed switch at temperature range of 200~250C.
In order to utilize this merit, the developments on heat-resistive passive components such as snubber capacitor, snubber resistor, metalized substrate and ceramic circuit board, along with the development on technology for packaging, are conducted.
“Heat-Resistive Capacitor”
In the development of the first-stage and the second-stage prototypes of MLCCs (Multi-Layered Ceramic Capacitors), the structure of a metal terminal and the bonding condition between a metal terminal and a MLCC were optimized. According to the heat cycle accelerating test at the temperature range between -40 °C and +250 °C, in 1,000 cycle times, no significant deterioration in electrostatic capacity and no significant amount of leakage current for the first-stage prototype of MLCCs were observed.
“Heat-Resistive Resistor”
We have provided first-stage module parts and second-stage module parts to the packaging technology groupe. Based on the results of our group last year and the evaluation results produced by the packaging group, we have designed and developed final level parts, which achieved the heat resistant temperature of 250 -C and resistance variation less than ±10% at the temperature range between -40 and 250 -C.
“Metalized substrate”
A silicon nitride ceramic with high thermal conductivity of 165 W/(m-K), high fracture toughness of 6 MPa-m1/2 and moderate strength of 500 MPa (second-level substrate) was developed by optimizing the nitriding conditions of Si compacts and post-sintering conditions. Second-stage metalized substrate in which copper plates were bonded with the second level substrate has been successfully fabricated as a result of optimization of brazing metal structure as well as structural design for metal-ceramic interface.
“Ceramic Circuit Board”
Ceramic circuit boards characterized as a via-array circuit system or a thick internal conductor layer circuit system for the second-stage module have been developed based on the evaluation results of the first-stage modules and structural designs via thermal- stress analysis. In the via-array circuit system durability during high temperature operation was improved. In the thick internal conductor layer circuit system, improvement of reliability for the module was achieved by optimizing the structure and co-firing process.

“Packaging Technology”
The 1200V-50A-class SiC power module which is composed of SiC power devices, ceramics resistor, ceramics capacitor, and ceramics substrates has been assembled. The high temperature reliability of the module was investigated under thermal cycling conditions at -40~250 °C. The test results were reflected to passive components group for optimizing the characteristics of passive components. High temperature soldering technique using Au-Ge-Ag systems was developed. Those solidus temperature was controlled to be 450 ℃ and those shear strength was estimated more than 20 MPa.
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