成果報告書詳細
管理番号20140000000595
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) 低倍率集光型薄膜フルスペクトル太陽電池の研究開発 (p型透明導電膜)
公開日2015/2/19
報告書年度2013 - 2013
委託先名学校法人龍谷大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Innovative PV Technology
“Thin Film Full Spectrum Solar Cells with Low Concentration Ratios”
Ryukoku University joint implementation with Niigata University

The research program was begun in FY 2008. In that year, the Ryukoku University group focused on two areas. Following is a summary of our results.

Task #1: Cu2SnS3 based thin films and solar cells
 Cu2-xSnS3 (CTS) powders with x=0.0-0.3 were prepared by mixing the elemental powders and post-heating. We deposited CTS films by a screen printing and high-pressure sintering (PHS) process and post-annealing under a 1% H2S/N2 gas atmosphere. The solar cells were fabricated with a device structure of Ag/ ITO/i-ZnO/CdS/CTS/Mo/soda-lime glass. The CTS solar cell with x = 0.1 showed maximum efficiency of 1.03%. Then, we prepared Cu1.9SnS3 powders by mixing the elemental powders and post-heating at various temperatures. The CTS solar cell with Cu1.9SnS3 powder prepared by post-heating at 300 °C showed an efficiency of 1.38% with Voc of 182 mV, Jsc of 21.7 mA/cm2, and FF of 0.350.
 Cu2GeSe3 (CGSe) was synthesized by mixing elemental powders and post-heating at 600oC in N2 gas. The band gap of Cu2GeSe3 was determined to be 0.78 eV by the diffuse reflectance spectra of the powder. Then, the Cu2(Sn1-xGex)Se3 (CTGSe) solid solution with 0 - x - 1.0 powders were also synthesized. The preliminary fabricated Cu2(Sn0.6Ge0.4)Se3 solar cell showed an efficiency of 2.43%, with a Voc of 334 mV, a Jsc of 20.4 mA/cm2, and an FF of 35.5%.

Task #2: Development of p-type TCO films for thin film full spectrum solar cells
(a) Transparent p-type conductive BaCuSeF films prepared by pulsed laser deposition (PLD) were studied for application to tandem configuration solar cells. The BaCuSeF films were deposited at low substrate temperatures (TS) of 150, 200, 250 and 300oC. The films prepared at TS - 200oC show considerably high transmittance in the visible light region. All of the films showed p-type conductivity with more than 1 S/cm. These BaCuSeF films were deposited on the CdTe layer of CdS/CdTe solar cells. A high conversion efficiency of 2.82% was obtained for the solar cells with the BaCuSeF film deposited at Ts = 200oC. The higher efficiency of 3.12% was obtained by inserting a thin Ni0.97Li0.03O buffer layer between the BaCuSeF and CdTe layers.
(b) Niigata University was mainly working to develop p-type NiO films by the reactive-sputtering under Ar-diluted oxygen gas. With decreasing oxygen-gas concentration and/or increasing substrate temperature, NiO XRD-peak-intensity and transparency increased and p-type conductivity decreased, suggesting that improvement in crystal-quality is closely related with decreases of intrinsic acceptor defects. Ag-doping under low oxygen gas concentration caused an increase of p-type conductivity, suggesting increases of intrinsic acceptor defects and/or Ag acceptors.
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