成果報告書詳細
管理番号20140000000666
タイトル*平成24年度中間年報 太陽エネルギー技術開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発 (産業開発プラットフォームの構築(太陽電池試作ライン))
公開日2015/2/19
報告書年度2012 - 2012
委託先名学校法人豊田工業大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells (Installation of Experimental Process line) (FY2010-FY2014) FY2012 Annual Report

Objective:The objective of this theme is to collaborate among all participant companies and institutes closely and accelerate and elevate the research and development by consortium framework centered on Toyota Technology Institute (TTI). TTI has been undertaking a role to construct the pilot line of crystalline silicon solar cell as a part of the industrial development platform.Results:Construction of pilot line of crystalline silicon solar cellTTI has been constructing the pilot line of crystalline silicon solar cell and improving it continuously. We have already established the environment to fabricate the conventional crystalline silicon solar cell by the end of previous financial year. In this year, we were maintaining and improving the pilot line to evaluate new materials and new processes. Additionally, we tried to develop new high efficiency solar cell, so-called PERL (Passivated Emitter and Rear Localized BSF) cell using low cost process which is applicable for mass-production. The main results of the development of elemental technologies to realize PERL cell are as follows;1. Control of texturization We have established new texturization process to control texture size arbitrarily, and succeeded to form small texture under 1um repeatedly, which is quite smaller than the conventional texture size, around 6~7um.2. Ag paste for lightly doped emitter (LDE) We investigated new Ag paste that is able to contact with low resistance and without any damage to LDE, and we have confirmed the advantage of it.3. Super fine finger We have succeeded to form the super fine silver finger under 30um using conventional screen printing method.4. Formation of contact hole and L-BSF We have established the new process to form contact hole using screen printing of etching paste and to form L-BSF using Al paste screen printing and firing, which is suitable for mass production.5. Inline ion doping system We investigated new inline ion doping system as a hopeful technology which is able to balance high efficiency and low cost. We have confirmed to form boron doping layer using the system and control the doping profile by control of conditions of implantation and annealing.We will realize the high efficiency solar cell by improvement of these elemental technologies, combination of them and optimization of structure, design and process parameters in the next year.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る