成果報告書詳細
管理番号20140000000669
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(太陽電池用低価格単結晶シリコン成長法の研究開発)
公開日2015/2/19
報告書年度2012 - 2012
委託先名独立行政法人物質・材料研究機構
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title : Crystal Growth for Low Cost Si Single Crystals for Photovoltaic (FY2010-FY2014)  FY2012 Annual Report

Crystal Si is the most prevailed material for solar cell application. At present stage, it is necessary to improve crystal Si technology to increase efficiency and reduce cost of Si solar cells. We have been trying to develop the new crystal Si growth technology to achieve this social demand. In this project, we have been performing advanced cast method for growing mono crystal Si for solar cells. This year, we have pursued the following subjects ;(1) Establish the seed cast growth with laboratory size furnace. We have grown several ingots of 100 mm diameter and have obtained the relation between cooling process and residual strain. According to this data, the cooling process was optimized. (2) Fabricate and improve the demonstration furnace cooperating with the Kyushu University group.We have fabricated the demonstration furnace for 50 cm square (9 rods) ingot. Several points including gas flow were developed. Facetted ingots were grown using this furnace. (3) Characterize seed cast Si ingots.The advantage of mono-cast Si ingot was evaluated. The relative efficiency of mono-cast Si was about 2 % higher than that of conventional multicrystalline cast Si.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る