成果報告書詳細
管理番号20140000000673
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(室温レーザードーピングプロセスの研究開発)
公開日2015/2/19
報告書年度2012 - 2012
委託先名国立大学法人奈良先端科学技術大学院大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Laser Doping Process at Room Temperature) (FY2010-FY2014)  FY2012 Annual Report 

Research and development of laser doping technique are investigated. Laser process is expected as a novel doping method at very low temperatures, and can be utilized for very thin wafers in the next generation. In addition, high throughput capability without photolithography is preferable to make high efficiency cell configuration at low cost with mass-production scale. This research theme contains two major subjects; 1. High controllability in density and depth profiling of doping, and 2. Precisely controlled local doping with desired sizes and patterns. Two laser systems with ultraviolet (355 nm) and visible (532nm) wavelength were used. Substrates of Si covered by thin films containing doping precursors were irradiated by the focused laser beam at room temperature. Substrates were moved automatically by the x-y stage to form doping region. The size of laser beam was 6-30 micrometers in diameter. The intensity at the irradiated spot was varied by changing laser power, scanning speed of x-y stage and beam shape modified by lenses. The obtained maximum doping density was in the range of 1E20 - 1E21cm-3 both in the case of p and n type doping using Boron and Phosphorus, respectively. Appropriate doping profile along the depth direction was realized compared with the thermal diffusion and the improved current voltage characteristics were obtained. The morphology of irradiated area was investigated in cases of various surface treatments before irradiation. On chemically etched smooth surfaces with hydrophilic feature very homogeneous surfaces were realized. On the other hand, hydrophobic surfaces induced weak adhesion and poor surface morphology. The relationship between the surface condition and doping properties should be revealed and optimized in near future.
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