成果報告書詳細
管理番号20140000000674
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(ナノ表面・界面制御による超薄型シリコン・ヘテロ接合太陽電池の高効率化に関する研究開発)
公開日2015/2/19
報告書年度2012 - 2012
委託先名国立大学法人東京工業大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Research on high efficiency very thin Si heterojunction solar cell with nano-level controlled surface and interface ) (FY2010-2014) FY2012 Annual Report

(1) Development of passivation films: The passivation quality of ALD-a-AlO:H films deposited on textured c-Si wafers was investigated to suppress blistering of the films. The use of the textured wafers effectively suppressed the blistering, however the passivation quality deteriorated. We also investigated the effect of acid based etching of the textured wafer. The etching reduces the sharpness of the texture, resulting in the good passivation quality without blistering. We achieved an effective surface recombination velocity of 6 cm/s for textured c-Si wafers treated by the acid based etching using the ALD- a-AlO:H layers.
(2) Development of novel heterojunction solar cells: The optimization of n-type nanocrystalline cubic silicon carbide (nc-3C-SiC:H) heterojunction emitter was carried out to realize a high quality emitter for p-type c-Si wafers. We achieved a very high open circuit voltage of 0.721 V for c-Si heterojunction solar cells at an optimum process condition. This open circuit voltage is the 2nd highest value for p-type c-Si wafer based solar cells. This clearly indicates the potential of the nc-3C-SiC:H heterojunction emitter. We also fabricated c-Si heterojunction solar cells with an n-type nc-3C-SiC:H heterojunction emitter and an a-AlO:H rear passivation layer with point contacts. The point contact structure was formed by using a laser firing technique. Up to now, we obtained an efficiency of 19.8% (Voc: 0.677 V, Jsc:39.9 mA/cm2).
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