成果報告書詳細
管理番号20140000000675
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(次世代ヘテロ接合シリコン結晶太陽電池の接合評価)
公開日2015/2/19
報告書年度2012 - 2012
委託先名国立大学法人岐阜大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Research on multiscale evaluation of thin heterojunction film for next genertion high efficiency solar cell by conductive AFM ) (FY2010-2014) FY2012 Annual Report

In order to develop a photovoltaic microscopy system for crystalline silicon solar cell, it was necessary to decrease scratched damage by the cantilever on a surface of crystalline silicon. Therefore a tapping method is introduced. As the result it becomes able to measure a surface of crystalline silicon with very low damage, and acquires more clear current-maps. In order to improve efficiency of a-Si/c-Si hetero-junction solar cell, it is important to realize high open circuit voltages (over 750mV) in keeping with high short circuit currents. High open circuit voltages of a-Si/c-Si hetero-junction flat surface solar cells are often reported, the short circuit currents are still low. Although textured c-Si substrates are introduced to achieve higher short circuit currents, the open circuit voltages are still lower than about 700mV. So we have detected a-Si/c-Si hetero-junction surface that is textured by alkali-etching, and fond obvious leak current parts localized at mountain ridges using by the photovoltaic microscopy system. In order to decrease leak current parts, new methods are created to smooth the mountain ridges. As the result new acid-etching have succeeded to decrease leak current parts obviously.
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