成果報告書詳細
管理番号20140000000677
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン太陽電池の研究開発 (微細レーザー加工技術による高効率化研究開発)
公開日2015/2/19
報告書年度2012 - 2012
委託先名三菱電機株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Improvement of Solar Conversion Efficiency by Development of Laser Microfabrication Process) (FY2010-FY2014) FY2012 Annual Report

We have investigated the processes for fabricating the high-efficiency solar cells with low-reflective textured surface, a rear partial contact with high-quality passivation layer and a low-resistive electrode by utilizing the laser microfabrication technique. The surface of the wafers is passivated by thin thermal silicon-dioxide layers. The minority carrier lifetime of the wafers becomes longer and the implied open-circuit voltage of 690 mV is obtained. The rear surface of the wafers has boron-doped layer diffused from BSG layer made by APCVD. Implied voltage of 675 mV was obtained. A fine-line screen printer and copper plating bath is introduced for making electrodes of solar cells. For the plating method, the film patterning technique is used for the fabrication of electrode patterns. For the low-reflective textured surface, the inverted pyramid structure is fabricated by utilizing high-speed laser patterning of an etching mask and anisotropic wet etching of silicon beneath the mask. For the homogenization of the surface reflectance and inverted pyramids arrangement, a laser control method and a fabrication method of the mask layer are optimized. We have fabricated 15-cm-square monocrystalline silicon solar cells by utilizing the developed technologies. As a result, a conversion efficiency of 19.9% is achieved.
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