成果報告書詳細
管理番号20140000000684
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 銅ペースト量産化技術と試験・評価方法に関する研究開発(2)
公開日2015/2/19
報告書年度2012 - 2012
委託先名独立行政法人産業技術総合研究所
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research and Development of Mass Production Technology for Cupper Paste and Evaluation method. (FY 2012-2013) FY 2012 Annual Report

The object of this project is to develop methods to test and evaluate Cu pastes to industrialize Cu paste for low cost crystal silicon solar cell. While some methods to test and evaluate conventionally-used Ag electrode has been already developed, the one for Cu pastes are not fully established. It is necessary to develop the method in order to introduce them into solar cell markets as a PV electrode. The issues to be solved on Cu pastes are as follows: (1) Cu ion can diffuse into crystal silicon so that it interacts with photocarrier centers to recombinate. As a result the lifetime of photocarrier decreases and thereby the conversion efficiency decreases.(2) EVA films to encapsulate PV cells can turn the color if Cu ion diffuse into EVA films; (3) Cu ion migration can be one of the sources causing Potential Induced Degradation (PID) because of high internal bias.This year we have been developing a method to detect the lifetime of photocarriers to evaluate whether our developing Cu paste can diffuse into Si. And also we evaluate a new Cu paste provided by our partner. In order to measure the lifetime, we purchased WCT-120 made by Sinton Instruments. This year we focused on the removal of insulating layer in the top layer of PV cell since we are using commercially available solar cells with an insulating layer. It was done with etching pastes for screen printing. As a result 3cmx3cm etching pattern was successfully formed. We screen-printed metal pastes on top of it. The contact resistances between the pastes and etched silicon were measured, resulting in obtaining unexpectedly high resistivity. We do not know the reason yet, but it is noteworthy that our paste including a low melting point alloy (LMPA) showed the lowest resistivity, even lower than commercially available Ag paste. The reason might be attributed to LMPA that can augment the contact surface area with textured silicon surface after its melted.
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