成果報告書詳細
管理番号20140000000685
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 赤外線FZ法によるN型四角形状シリコン単結晶育成方法の研究開発(1)
公開日2015/2/19
報告書年度2012 - 2012
委託先名株式会社クリスタルシステム
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Research and Development for Growth Technique of N-type Rectangular Silicon Single Crystalse. (FY 2012-2013) FY 2012 Annual Report

The purpose of our project is to develop low cost growth technique of N-type silicon single crystals for application of HIT type solar cells with high conversion efficiency around 25%. This research project is curried out by cooperation with National university corporation University of Yamanashi as follows. (1) Research and development of technique and apparatus for crystal growth of large and rectangular silicon single crystals by the infrared-heating FZ method (curried out by Crystal Systems Corp.) (2) Research and development of characterization technique for large silicon single crystals grown by infrared-heating FZ method (curried out by University of Yamanashi). In 2012, we had developed large scale infra-red heating FZ machine which would be used for the growth of large scale rectangular N-type silicon single crystals. The scale of the developed machine: 1,050cm height, 520cm width, and 480cm depth. Both the pre-heater for the feed rod and the after heater for the grown crystals were also developed and set. This new furnace can use a large scale feed rod as 1000mm length and 150mm diameter made by the traditional Siemens method, and can grow standard size solar silicon crystals with their size of 200mm diameter. And finally, the rectangular shaped single crystals would be grown by this furnace. In normally, the “ necking technique” is used for the growth of really single domain crystals, because so many dislocations should be introduced into the grown crystal when the seed crystal touched with molten liquid at the initial stage of the growth. Then these introduced dislocations have to be diminished using the necking technique which needs so difficult and time consuming procedure. We had succeeded to grow large scale silicon single crystal under necking less procedure which would give us so low cost and high quality single crystals for solar application. The infra-red floating zone method can apply the travelling solvent scheme during the growth, then the composition of the grown crystals become uniform composition and this method need no crucible, therefore, the production cost by this method would be so low, and the temperature stability of this furnace should be much stable than that of radio-frequency floating zone furnace. This means that very high quality N-type silicon single crystals should be grown with so lower cost.
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