成果報告書詳細
管理番号20140000000686
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 赤外線FZ法によるN型四角形状シリコン単結晶育成方法の研究開発(2)
公開日2015/2/19
報告書年度2012 - 2012
委託先名国立大学法人山梨大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:Research and Development for Growth Technique of N-type Rectangular Silicon Single Crystalse. (FY 2012-2013) FY 2012 Annual Report

The purpose of our project is to develop low cost growth technique of N-type silicon single crystals for application of HIT type solar cells with high conversion efficiency above 25%. This research project is curried out by cooperation with Crystal Systems Corporation as follows. (1) Research and development of technique and apparatus for crystal growth of large and rectangular silicon single crystals by the infrared-heating FZ method (curried out by Crystal Systems Corp.) (2) Research and development of characterization technique for large silicon single crystals grown by infrared-heating FZ method (curried out by University of Yamanashi). In 2012, we tried to grow P-doped silicon single crystals using a conventional FZ apparatus, and characterized crystallographic perfection by X-ray diffraction rocking curve measurement and observation of some defects such as inclusions and negative crystals by infrared optical microscope and SEM. Polycrystalline feeds of P-doped silicon were prepared by thermal treatment of the high-pure polycrystalline silicon rods of 10-15mm in diameter with phosphorus powder in a vacuum-sealed quartz tube at 1000 degrees centigrade for 72 hours. Single crystals of P-doped silicon with typical size of 20 mm in diameter and 100 mm long were grown successfully in high-pure argon (purity of 5N5) at growth rate of 12 - 60 mm/h. Contamination of oxygen was prevented by clean up of feed rods using acid solution and high-vacuuming below 10-3 Pa in the growth chamber. Contamination of carbon was due to carbon evaporation from the SUS shafts by heating, and was prevented by change from SUS shafts to Mo shafts. The grown crystals of P-doped silicon had high phosphorus concentration of 1.3X10^16 atom/cm3 and low concentrations of oxygen and carbon, 1.0X10^16 and 3.7X10^16 atom/cm3, respectively. The carbon contamination may be no serious problem for large type FZ apparatus since only the long feed and seed are heated at high temperature for large FZ apparatus. X-ray diffraction rocking curve was measured in the cross section of the P-doped silicon single crystals grown using a conventional FZ apparatus. The FWHM was determined to be 0.016(6) degrees on an average, and tend to be small at the center region. The peak position was determined to be 14.241(6) degrees on an average. The peak distribution was almost uniform at the center region in the cross section. We also confirmed that X-ray diffraction rocking curve measurement is useful to detect FWHM distribution preciously in the silicon crystals. The microscopic observation of some defects such as inclusions and negative crystals in the grown crystals is under examination now.
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