成果報告書詳細
管理番号20140000000690
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発 (革新的太陽電池用単結晶成長法の研究開発)
公開日2015/2/19
報告書年度2013 - 2013
委託先名国立大学法人九州大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Solar energy Technology research and development: Development of High technology in next generation for Solar energy system: Research and development of Crystalline silicon solar cells: Development of growth method of silicon single crystals (FY2010-FY2014) FY2013 Annual Report

The project mainly focuses on the development of crystallization process of silicon single crystal for PVs using a directional solidification method. Several papers on crystallization silicon single crystals have been reported from BP solar and other groups so far. They reported that dislocation and impurity contamination degrades quality of silicon crystals. To overcome the difficulties, we have developed a new numerical code which can predict dislocation density, residual stress distribution in a three-dimensional way. Furthermore, NIMS and Toyota Institute of Technology annealed a silicon single crystal. They measured the dislocation density and residual stress distribution in the crystal. The calculated results of dislocation density and residual stress are quantitatively similar to those of experimentally obtained. We succeeded in to predict dislocation density and residual stress quantitatively. The method is now transferring to some private company.
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