成果報告書詳細
管理番号20140000000691
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(太陽電池用低価格単結晶シリコン成長法の研究開発)
公開日2015/2/19
報告書年度2013 - 2013
委託先名独立行政法人物質・材料研究機構
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title : Crystal Growth for Low Cost Si Single Crystals for Photovoltaic (FY2010-FY2014) FY2013 Annual Report

Crystal Si is the most prevailed material for solar cell application. At present stage, it is necessary to improve crystal Si technology to increase efficiency and reduce cost of Si solar cells. We have been trying to develop the seed cast Si growth technique to achieve this social demand. In this project, we have been improving seed cast technique and growing mono crystal Si ingots for solar cells. This year, we have pursued the following subjects. (1) Establish the seed cast growth with laboratory size furnace. (2) Fabricate and improve the demonstration furnace cooperating with the Kyushu University group. (3) Characterize seed cast Si ingots. #(1) Seed cast growth with laboratory size furnace. To demonstrate the advantage of mono cast ingot, we have tested the dislocation generation according to thermal history. The result confirms that dislocations introduced by this thermal origin is in the order of 10^3 cm^-3, which assure the advantage of mono cast Si. (2) Fabricate and improve the demonstration furnace.We have grown several 50 cm square (9 rods) ingots. Some of them are supplied to the partner to check the crystal quality and PV efficiency. (3) Characterize seed cast Si ingots. This study is now going on.
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