成果報告書詳細
管理番号20140000000695
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(室温レーザードーピングプロセスの研究開発)
公開日2015/2/19
報告書年度2013 - 2013
委託先名国立大学法人奈良先端科学技術大学院大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: High Performance PV Generation System for the Future. R and D on Ultimate Wafer-based Si Solar Cells. (Laser Doping Process at Room Temperature) (FY2010-FY2014) FY2013 Annual Report

Research and development of laser doping technique are investigated. Laser process is expected as a novel doping method at very low temperatures, and can be utilized for very thin wafers in the next generation. In addition, high throughput capability without photolithography is preferable to make high efficiency cell configuration at low cost with mass-production scale. This research theme aims two major subjects; 1. High controllability in impurity density and depth profiling of doping, and 2. Precisely controlled local doping with desired sizes and patterns. Two laser systems with ultraviolet (355 nm) and visible (532nm) wavelength were used. Silicon (Si) nano-ink was used as doping precursor. Si nano-ink was liquid in which silicon nano particles (20-50 nm in diameter) were immersed in solvent, and easily printed on Si wafers. Substrates covered by Si nano-ink layer were irradiated by the focused laser beam at room temperature. Substrates were moved automatically by the X-Y stage to form doping region. The intensity at the irradiated spot was varied by changing laser power, scanning speed of X-Y stage and beam shape modified by lenses. The obtained maximum doping density was in the range of 1E20cm-3 both in the case of p and n type doping using Boron and Phosphorus doped Si nano-ink, respectively. Doping depth became deeper with increasing the laser power since melted layers became thicker, and the obtained pn junction depth was increased. The spectral response showed reasonable tendency relating with the doping depth. Optimum doping profile should be designed to realize high conversion efficiency. The morphology of irradiated area was governed by the beam diameter which showed that localized doping will be possible using the finely focused laser beams.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る