成果報告書詳細
管理番号20140000000701
タイトル*平成25年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(産業開発プラットフォームの構築(物性評価))
公開日2015/2/28
報告書年度2013 - 2013
委託先名学校法人明治大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:High Performance PV Generation System for the Future R and D on Ultimate Wafer-based Si Solar Cells. (Common industrial platform (material evaluation)) (FY2010-FY2014) FY2013 Annual Report

The common industrial platform can be categorized into following three areas, i.e. the evaluation platforms for the fabrication processes of 1) high performance multi-crystalline substrates, 2) low cost single crystalline substrates, and 3) solar cells. For the feed stock evaluation, the energy levels of donor and acceptor impurities in high concentration ranges in highly compensated Si for photovoltaic applications have been examined based on the analysis of donor-acceptor (DA) pair luminescence. The fine structure in the luminescence showed no dependence on dopant concentrations in the ranges from middle 1015 to low 1017 cm-3, which leads us to suggest that the dopant impurities act as isolated donors and acceptors without noticeable reduction of ionization energies due to high doping. Evaluation of small-angle grain boundaries (SA-GBs) is important for improving the quality of multicrystalline Si (mc-Si) solar cells because they decrease the minority carrier lifetime. We carried out microscopic deep-level photoluminescence analysis on the SA-GBs which have different orientation angles and major rotation axes to clarify their detailed electronic properties in relation to the structural character. To improve the quality of seed cast ingot, we have tried to customize the Si3N4 coating. This is important to reduce residual strain and light element contamination. Various Si3N4 powders were coated on the quartz plates and the contact angle between Si melt and coating was measured by newly developed instruments. Through this experiment, we have found that the detaching and stability of Si3N4 powders as well as contact property. N-type substrate has attracted attention for higher efficiency crystalline Si solar cell. In the fabrication process, the emitter layer can be formed by boron diffusion using various techniques. We suggested ion shower doping process in order to realize lower production cost and high through put. Other process technique, atmospheric pressure chemical vapor deposition of boron silicate glass is one of the promising diffusion source as well as gas phase diffusion because single side doping can be achieved. However, formation of the surface high boron concentration layer (BRL: B-rich layer) causes the minority carrier recombination at the surface. In the prototype cell experiment, the bifacial cell using ion shower doping was indicated high efficiency over 18 %. The control of BRL formation shows significance of the BRL free diffusion process.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る