成果報告書詳細
管理番号20140000000668
タイトル*平成24年度中間年報 太陽エネルギー技術研究開発 太陽光発電システム次世代高性能技術の開発 極限シリコン結晶太陽電池の研究開発(革新的太陽電池用単結晶成長法の研究開発)
公開日2015/4/29
報告書年度2012 - 2012
委託先名国立大学法人九州大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Solar energy Technology research and development: Development of High technology in next generation for Solar energy system: Research and development of Crystalline silicon solar cells: Development of growth method of silicon single crystals (FY2010-FY2014) FY2012 Annual Report

The project mainly focuses on the development of crystallization process of silicon single crystal for PVs using a directional solidification method. Several papers on crystallization silicon single crystals have been reported from BP solar and other groups. They reported that conversion efficiency at a periphery is degraded due to undesired crystallization of poly at this area. At the second stage of this project, we have developed to overcome the problem of the formation of such undesired growth by controlling heat flux from outside. To satisfy the requirement, we designed a new furnace by using a newly developed code for the prediction of crystallization process of silicon using directional solidification process. The code includes crystallization and cooling process of silicon to predict the best process for PVs. The calculation result indicated that design of heating system is extremely important to avoid the problem. Furthermore, the control of dislocation density and residual stress distribution is also important to improve efficiency of solar cells. Experimental results of a crystal grown by NIMS and Toyota Institute of Technology show that residual stress, residual strain and dislocation density can be reduced by our newly developed cooling process.
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