成果報告書詳細
管理番号20140000000714
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) 高度秩序構造を有する薄膜多接合太陽電池の研究開発 (ヘテロ接合デバイス化-低ダメージ成膜)
公開日2015/5/1
報告書年度2013 - 2013
委託先名京セラ株式会社
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research and Development of Thin Film Multi-Junction Solar Cells with Highly Ordered Structures (Hetero-junction device - Low Damage Deposition), (FY2008-2014) FY2013 Annual Report

[Objective in FY2013] We search for the high-quality hetero-junction formation method with PCVD and a suitable hetero-junction material for bottom cell of the triple junction thin film solar cell. We aim to achieve Voc=0.28V using around 0.65eV band-gap material such as c-Ge or Voc=0.30V using 0.7eV over band-gap material such as SiGe with hetero-junction solar cell. Our final target is η≧20% as a triple junction solar cell by introducing this bottom cell. [Result in FY2013] We manufactured a-Si/Ge hetero-junction solar cell using a single-crystal Ge substrate and evaluated it. Voc was improved by a combination of low power film formation a-Si layer and post-anneal process, and use of the low resistivity substrate. As a result, we achieve Voc 0.292V with both sides hetero-junction cell, and conversion efficiency of 6.94% (Voc 0.282V) with single side hetero-junction cell. In addition, -0.85%/deg which was better than -1.1%/deg of the typical homo-junction Ge cell was provided by the temperature coefficient evaluation, and an advantage of the hetero-junction for the homo-junction structure was confirmed. We perform to manufacture and evaluate of hetero-junction cell based on SiGe Epi substrate in FY2014. By optimization of the SiGe material’s process and structure for utilization of the long wavelength light, we aim at higher than current density 15mA/cm2 for the light lower than 1.4eV with hetero-junction solar cell based on 0.9eV band-gap material.
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