成果報告書詳細
管理番号20140000000718
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) 高度秩序構造を有する薄膜多接合太陽電池の研究開発
公開日2015/4/24
報告書年度2013 - 2013
委託先名独立行政法人産業技術総合研究所
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Exploring multi-junction thin-film solar cells with highly ordered structures (FY2008-2014) FY2013Annual Report

In order to obtain efficiency over 40%, we have studied highly ordered novel materials for optimized band gap and mechanically stacked two-terminal multi-junction solar cells. To achieve higher efficiency, the light management technologies including photonic structure, utilization of plasmon effect are also the research themes. Novel mechanical stacking technology is a must for fabricate two-terminal solar cell structure. Followings are some of the major results of research themes carried out in FY2013. 1-1-1: Development of mechanical stack and device fabrication technologies: A new direct bonding technique with conductive nanoparticle alignment has been developed. Using this bonding method, GaInP /GaAs /InGaAsP/InGaAs 4-junction solar cells was fabricated and the total efficiency of 30.4% was attained. Also, GaInP/GaAs/CuInGaSe 3-junction solar cells with 24.2% efficiency was realized, which was the highest value as III-V/Cu(InGa)Se2 cell combinations. 1-2-1: Development of advanced light management technologies: Based on numerical simulation results, a flattened light scattering substrate (FLiSS) with an improved design was developed and applied to thin-film microcrystalline silicon solar cells with a thickness of 3 μm. As a result, the conversion efficiency was enhanced by 25% compared with a reference cell on a flat substrate. A noble transfer-printing technique for fabrication of plasmonic metal nanodisks was applied to thin-film silicon solar cells and the conversion efficiency was improved by 4% - 11%. 2-1-1: Development of Si-Ge bottom cells: Strain-relaxed Si0.16Ge0.84 films with low dislocation density were obtained by using stepwise, compositionally graded buffer layers on Si substrates. The short circuit current density was increased from 15.2 mA/cm2 for Si heterojunction solar cells to 24.0 mA/cm2 for SiGe solar cells as a result of an extended absorption edge of 0.91eV (1350nm). 2-3-1: Development of bottom cells using strongly-correlated materials: In order to realize single-crystalline thin-film cells, we designed organic correlated materials that exhibit high layered crystallinity We successfully obtained flake-like single crystals of (C8-BTBT)(TCNQ). The material exhibits narrow band gap of about 1.2-1.5 eV and carrier mobility larger than 0.1 cm2/Vs both for hole and electron. We also manufactured thin films of (C8-BTBT)(TCNQ) by co-evaporation method. 3-2-1: Development of compound semiconductor top cells: We obtained a high conversion efficiency of 12.8% (without ARC) for InGaP solar cells with a bandgap of 1.9 eV. We fabricated InGaAsP solar cells on InP substrates with a high efficiency of 7.6% (without ARC) by solid-source MBE for the first time. MBE-grown InGaP/GaAs tandem top and InGaAsP bottom cells are stacked by a direct bonding technique developed in subtheme 1-1-1. A fabricated triple-junction cell has a high efficiency of 25.6% and a high open circuit voltage of 2.66 V.
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