成果報告書詳細
管理番号20140000000770
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事) ポストシリコン超高効率太陽電池の研究開発(広帯域AIGalnN)
公開日2015/5/1
報告書年度2013 - 2013
委託先名国立大学法人名古屋大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Research and Development of Post-silicon solar cells for ultra-high efficiencies (Development of tandem-type solar cells based on AlGaInN having super wide-rage bandgap)" (FY2008-FY2014) FY2013 Annual Report
Subject of this team is to develop AlInGaN top cell on AlInGaP/GaAs/InGaAs or AlGaInP/GaAs/Ge multijunction solar cells. Final goal is to achieve more
than 3% efficiency improvement compared with three cells based on conventional III-Vs with the collaboration of Prof. Fujioka’s team, The University of Tokyo.
In year 2013, we focused on the following two subjects.
(a) Growth of In(Al)GaN with In composition higher than 0.3
High pressure MOVPE is found to be very effective in growing high In composition InGaN at higher growth temperatures. MQWs showing very strong yellow emission with a peak PL
of 560 nm can be successfully grown.
We also tried plasma assisted MBE for the growth of InGaN nanowire. In composition dependence of PL IQE was characterized in detail. At a peak PL of around 560 nm, IQE was 12% at most.
From these results, in year 2014, we will focus on high pressure MOVPE for the fabrication of high In composition InGaN-based top cell.
(b) Development of mechanical stack technology of AlInGaN top cell on AlInGaP/GaAs/InGaAs or AlGaInP/GaAs/Ge multijunction solar cells.
Mechanical stack was tried for GaN on AlInP using plasma erosion technology.
Plasma treatment was conducted for 30 sec. and erosion was continued for 1 hour under a pressure of 500 N at 450℃. We observed the electrical conduction between GaN and AlInP.
Simulations have been done for nitride single solar cell and two cells having tunnel junction.
Both of which show very good agreement with the experiments.
In fiscal year 2014, we will continue the effort of improving mechanical stack structure fabrication.
In addition, we will also try wavelength splitter instead of mechanical junction for the development of low cost fabrication process. We will also use simulator developed in fiscal year 2013
for the optimization of device structure.
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