成果報告書詳細
管理番号20140000000800
タイトル*平成25年度中間年報 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)ポストシリコン超高効率太陽電池の研究開発(自己組織化量子ドット)
公開日2015/4/15
報告書年度2013 - 2013
委託先名国立大学法人電気通信大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Research and Development of Post-silicon solar cells for ultra-high efficiencies (self-organization quantum dots)" (FY2008-FY2014) FY2013 Annual Report

 In the sixth year (2013) of this NEDO research project, our group of University of Electro-Communications developed in-plane ultrahigh-density InAs quantum-dots (QDs) and studied intermediate-band QD solar cells (IB-QDSCs). The main results are described as follows.
 
(1) In this project, fabrication of in-plane ultrahigh-density InAs QDs is one of important missions to realize the IB-QDSCs. In this year, we successfully fabricated ultrahigh density InAs QDs with 1.0 ×1012 cm-2 on the InAsSb wetting layer by molecular beam epitaxy (MBE). The in-plane ultrahigh density of 1.0 ×1012 cm-2 was a world record and was reproducibly obtained by adjusting the growth conditions.

(2) We measured μ-photoluminescence (PL) of in-plane ultrahigh-density InAs QD layers grown on the GaAsSb/GaAs(001). For low QD height (< 2 nm), PL linewidth decreased with increasing the excitation light power. It could be explained by spectrum limiting due to mini-band width. In addition, we found that selective excitation PL is one of useful method for analysis of the uniformity in in-plane mini-band formation.

(3) Based on detailed balance model, we theoretically calculated power conversion efficiency (PCE) of intermediate-band QD solar cells (IB-QDSCs). In this calculation model, IB width was considered for InAs/GaAsSb QDs. As the IB width increased, the PCE decreased in high QD density region of more than 1 ×1014 cm-2. These calculated results gave us valuable information about design of the IB-QDSCs.
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